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ANTI-PARALLEL SCR module ASSEMBLY-KPX1000A-1600V
Features:
all diffused design
high current capabilities
high surge current capabilities
high rates voltages
high dv/dt
low gate current dynamic gate
low thermal impedance
compact size and small weight
APPLICATION
High Power Drives
DC Motor Control
High Voltage Power Supplies
Blocking - Off State
| VRRM (1) | VDRM (1) | VRSM (1) |
| 1600 | 1600 | 1700 |
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
|
Repetitive peak reverse leakage and off state leakage |
IRRM / IDRM |
10 mA 100 mA (3) |
|
Critical rate of voltage rise |
dV/dt (4) |
1000 V/msec |
Conducting - on state
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Max. average value of on-state current |
IT(AV) |
|
1000 |
|
A |
Sinewave,180o conduction,Tc=95oC |
|
RConducting - on state MS value of on-state current |
ITRMSM |
|
1570 |
|
A |
Nominal value |
|
Peak one cPSTCle surge (non repetitive) current |
ITSM |
|
-
30 |
|
kA
kA |
8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
|
I square t |
I2t |
|
4500x103 |
|
A2s |
10 msec |
|
Treshold voltage |
VT(T0) |
|
0.928 |
|
V |
|
|
Slope resistance |
rT |
|
0.189 |
|
mΩ |
|
|
Latching current |
IL |
|
2000 |
|
mA |
VD = 12 V; RL= 12 ohms |
|
Holding current |
IH |
|
500 |
|
mA |
VD = 12 V; I = 2.5 A |
|
Peak on-state voltage |
VTM |
|
1.75 |
|
V |
ITM =3000 A(MAX); Tj =1 25 oC |
|
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
200 |
|
A/ms |
Switching from VDRM £ 1000 V, non-repetitive |
|
Critical rate of rise of on-state current (6) |
di/dt |
|
- |
|
A/ms |
Switching from VDRM £ 1000 V |
Gating
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Peak gate power dissipation |
PGM |
|
30 |
|
W |
|
|
Average gate power dissipation |
PG(AV) |
|
4 |
|
W |
|
|
Peak gate current |
IGM |
|
- |
|
A |
|
|
Gate current required to trigger all units |
IGT |
|
300 |
|
mA |
VD = 10 V;IT=3A;Tj = +25 oC
|
|
Gate voltage required to trigger all units
|
VGT |
|
3 |
|
V
|
VD = 10 V;IT=3A;Tj = +25 oC
|
|
Peak negative voltage |
VRGM |
|
5 |
|
V |
|
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor ,
Semiconductor Module,
Power Diode,
Silicon Transistor,
Bridge Rectifier
