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HIGH POWER THYRISTOR FOR INVERTER APPLICATIONS
YZPST-R0929LC10 (TQ<10US)
Thyristor Features:
. All Diffused Structure
. Interdigitated Amplifying Gate Configuration
. Guaranteed Maximum Turn-Off Time
. High dV/dt Capability
. Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
|
VRRM (1) |
VDRM (1) |
VRSM (1) |
|
1000 |
1100 |
1200 |
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
Notes:
All ratings are specified for Tj=25 oC unless otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addition to that obtained from a ubber circuit,comprising a 0.2 mF capacitor and 20 ohmsresistance in parallel with the thristor under test.
|
Repetitive peak reverse leakage and off state leakage |
IRRM / IDRM |
15 mA 70 mA (3) |
|
Critical rate of voltage rise |
dV/dt (4) |
200 V/msec |
Conducting - on state
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Max. average value of on-state current |
IT(AV)M |
|
929 |
|
A |
Sinewave,180o conduction,Tc=55oC |
|
RMS value of on-state current |
IT(RMS)m |
|
1893 |
|
A |
Nominal value |
|
Peak one cPSTCle surge (non repetitive) current |
ITSM |
|
-
9.0 |
|
kA
kA |
8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
|
I square t |
I2t |
|
405x103 |
|
A2s |
8.3 msec |
|
Latching current |
IL |
|
- |
|
mA |
VD = 24 V; RL= 12 ohms |
|
Holding current |
IH |
|
1000 |
|
mA |
VD = 24 V; I = 2.5 A |
|
Peak on-state voltage |
VTM |
|
2.04 |
|
V |
ITM = 1400 A |
|
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
1500 |
|
A/ms |
Switching from VDRM £ 1000 V, non-repetitive |
|
Critical rate of rise of on-state current (6) |
di/dt |
|
1000 |
|
A/ms |
Switching from VDRM £ 1000 V |
Gating
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Peak gate power dissipation |
PGM |
|
30 |
|
W |
|
|
Average gate power dissipation |
PG(AV) |
|
2 |
|
W |
|
|
Peak gate current |
IGM |
|
- |
|
A |
|
|
Gate current required to trigger all units |
IGT |
|
300 |
|
mA |
VD = 10 V;IT=3A;Tj = +25 oC
|
|
Gate voltage required to trigger all units
|
VGT |
|
3.0 |
|
V
|
VD = 10 V;IT=3A;Tj = +25 oC
|
|
Peak negative voltage |
VRGM |
|
5 |
|
V |
|
Dynamic
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Delay time |
tgd |
|
1.0 |
- |
ms |
VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C |
|
Turn-on time |
tgt |
|
2.0 |
- |
|
|
|
Turn-off time (with VR = -5 V) |
tq |
- |
10 |
- |
ms |
ITM=1000A, tp=1000us, di/dt=60A/us, Vr=50V, Vdr=33%VDRM, dVdr/dt=200V/us |
|
Reverse recovery current |
Irm |
|
- |
|
A |
ITM=4000A, tp=2000us, di/dt=60A/us |
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
|
Storage temperature |
Tstg |
-40 |
+150 |
|
oC |
|
|
Thermal resistance - junction to case |
RQ (j-c) |
|
- - |
|
K/kW |
Double sided cooled Single sided cooled |
|
Thermal resistamce - case to sink |
RQ (c-s) |
|
- - |
|
K/kW |
Double sided cooled * Single sided cooled * |
|
Thermal resistance - junction to case |
RQ (j-s) |
|
32 64 |
|
K/kW |
Double sided cooled Single sided cooled |
|
Mounting force |
F |
10 |
20 |
- |
kN |
|
|
Weight |
W |
|
|
- |
Kg |
about |
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode,
Silicon Transistor ,
Bridge Rectifier
