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Phase Control Thyristors
YZPST-T171-320-10
Features
Center amplifying gate configuration
Compression bonded encapsulation
High dV/dt Capability
Stud type, thread inch or metric
Typical Applications
Medium power switching
DC power supplies
Maximum Ratings And Characteristics
|
Symbol |
Parameter |
Values |
Units |
Test Conditions |
|
|
ON-STATE |
|
|
|
||
|
ITAV |
Mean on-state current |
320 |
A |
Sinewave,180° conduction,Tc=84oC |
|
|
ITRMS |
RMS value of on-state current |
502 |
A |
Nominal value |
|
|
ITSM |
Peak one cycle surge (non repetitive) current |
7 |
kA |
10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
|
|
I2t |
I square t |
240 |
KA2s |
8.3 msec and 10.0 msec |
|
|
IL |
Latching current |
700 |
mA |
VD = 24 V; RL= 12 ohms |
|
|
IH |
Holding current |
300 |
mA |
VD = 24 V; I = 2.5 A |
|
|
VTM |
Peak on-state voltage |
1.6 |
V |
ITM = 1005 A |
|
|
di/dt |
Critical rate of rise of on-state current |
non-repetitive |
1000 |
A/ms |
Gate drive 20V, 20Ω, tr≤1μs, Tj=Tjmax, anode voltage≤80% VDRM |
|
repetitive |
- |
||||
|
BLOCKING |
|
|
|
||
|
VDRM VRRM |
Repetitive peak off state voltage Repetitive peak reverse voltage |
1000 |
V |
|
|
|
VDSM VRSM |
Non repetitive peak off state voltage Non repetitive peak reverse voltage |
1100 |
V |
|
|
|
IDRM IRRM |
Repetitive peak off state current Repetitive peak reverse current |
70 |
mA |
Tj = 100 oC ,VRRM VDRM applied |
|
|
dV/dt |
Critical rate of voltage rise |
500 |
V/ms |
TJ=TJmax, linear to 80% rated VDRM |
|
|
TRIGGEING |
|
|
|
||
|
PG(AV) |
Average gate power dissipation |
3 |
W |
|
|
|
PGM |
Peak gate power dissipation |
- |
W |
|
|
|
IGM |
Peak gate current |
6 |
A |
|
|
|
IGT |
Gate trigger current |
250 |
mA |
TC = 25 oC |
|
|
VGT |
Gate trigger voltage |
2.5 |
V |
TC = 25 oC |
|
|
VGD |
Gate non-trigger voltage |
0.6 |
V |
Tj = 125 oC |
|
|
VT0 |
|
1.006 |
V |
Tj = 125 oC |
|
|
rT |
|
0612 |
mΩ |
|
|
|
SWITCHING |
|
|
|
||
|
tq |
Turn-off time |
125 |
ms |
ITM=320A, TJ=TJmax, di/dt=10A/μs, VR=100V,dv/dt=50V/μs, Gate 0V 100Ω, tp=500μs |
|
|
td |
Delay time |
- |
Gate current A, di/dt=40A/μs, Vd=0.67%VDRM, TJ=25 oC |
||
Thermal And Mechanical
|
Symbol |
Parameter |
Values |
Units |
Test Conditions |
|
Tj |
Operating temperature |
-40~125 |
oC |
|
|
Tstg |
Storage temperature |
-40~125 |
oC |
|
|
R th (j-c) |
Thermal resistance - junction to case |
0.085 |
oC/W |
DC operation ，Single sided cooled |
|
R th (c-s) |
Thermal resistance - case to sink |
- |
oC/W |
Single sided cooled |
|
P |
Mounting force |
- |
Nm |
± 10 % |
|
W |
Weight |
440 |
g |
about |
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Main Product:
Semiconductor Triac ,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode,
Silicon Transistor,
Bridge Rectifier
