
PARAMETER |
MUR 805G |
MUR 810G |
MUR 815G |
MUR 820G |
MUR 830G |
MUR 840G |
MUR 860G |
UNITS |
|
Maximum Repetitive Peak Reverse Voltage |
50 |
100 |
150 |
200 |
300 |
400 |
600 |
Volts |
|
Maximum RMS Voltage |
35 |
70 |
105 |
140 |
210 |
320 |
420 |
Volts |
|
Maximum DC Blocking Voltage |
50 |
100 |
150 |
200 |
300 |
400 |
600 |
Volts |
|
Maximum Average Forward Rectified Current .375 (9.5mm) Lead Length at TC =1000C |
8 |
Amps |
|||||||
Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load (JEDEC Method) |
125 |
Amps |
|||||||
Maximum Instandeous Forward Voltage at 8.0A |
0.95 |
1.25 |
1.65 |
Volts |
|||||
Maximum DC Reverse Current TA =250C at Rated DC Blocking Voltage TA =1000C |
10 250 |
|
uA |
||||||
Typical Junction Capacitance (Note 1) |
62 |
pF |
|||||||
Maximum Reverse Recovery Time (Note 2) |
35 |
35 |
nS |
||||||
Typical Thermal Resistance Note R JC |
3.0 |
0C / W |
|||||||
Operating and Storage Temperature Range TJ |
-55 to +150 |
℃ |
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode ,
Silicon Transistor,
Bridge Rectifier