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ABSOLUTE MAXIMUM RATINGS TC=25°C unless otherwise specified
|
Symbol |
Parameter |
Test Conditions |
Values |
Unit |
|
VRRM |
Maximum Repetitive Reverse Voltage |
|
1600 |
V |
|
VRSM |
Maximum Non-Repetitive Reverse Voltage |
|
1700 |
V |
|
ID |
Average Forward Current |
TC=85(62)°C |
130(160) |
A |
|
IFSM |
Non-Repetitive Surge Forward Current |
50Hz/60Hz |
1130/1180 |
A |
|
I2t |
I2t (For Fusing) |
50Hz/60Hz |
6400/5800 |
A2s |
|
VF(TO)1 |
Low level value of threshold voltage |
16.7%* π*IF(AV) < I < π *IF(AV),TCJ= 150°C |
0.78 |
V |
|
VF(TO)2 |
High level value of threshold voltage |
I > π*IF(AV),TCJ=150°C |
0.99 |
V |
|
rf1 |
Low level value of forward slope resistance |
16.7%* π*IF(AV) < I < π *IF(AV),TCJ= 150°C |
4.59 |
m Ω |
|
rf2 |
High level value of forward slope resistance |
I > π*IF(AV),TCJ=150°C |
4.17 |
m Ω |
|
VISO |
Isolation Voltage @AC1s |
50Hz |
3000 |
V |
|
TJ |
Junction Temperature |
|
-40 to +150 |
°C |
|
TSTG |
Storage Temperature Range |
|
-40 to +150 |
°C |
|
Md |
To heatsink (M6) |
|
4~6 |
N·m |
|
To terminals (M5) |
|
3~4 |
N·m |
|
|
RθJC |
Maximum thermal resistance, Junction to case |
DC operation per module |
0.16 |
°C/W |
|
DC operation per junction |
0.93 |
|||
|
120 。rect. Per module |
0.18 |
|||
|
120 。rect. Per junction |
1.08 |
|||
|
Rθcs |
Case to heatsink |
Per module |
0.03 |
ELECTRICAL CHARACTERISTICS （Per diode TC=25°C unless otherwise specified）
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
IRRM |
|
TC= 150°C |
|
|
10 |
mA |
|
VFM |
Forward Voltage Drop |
IF =200A, TJ=25°C |
|
|
1.63 |
V |
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Main Product:
Semiconductor Triac ,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode,
Silicon Transistor,
Bridge Rectifier
