Product
Product
Supplier
Search
Get Quote
730 people are quoting
M2G0080120D
1200V N-Channel Silicon Carbide Power MOSFET SiC MOSFET
Features
• Optimized package with separate driver source pin
• High blocking voltage with low on-resistance
• High-speed switching with low capacitances
• Fast intrinsic diode with low reverse recovery (Qrr)
• Easy to parallel
• RoHS compliant
Benefits
• Higher System Efficiency
• Reduce cooling requirements
• Increased power density
• Enabling higher frequency
• Minimize gate ringing
• Reduction of system complexity and cost
Applications
• Switch Mode Power Supplies
• DC/DC converters
• Solar Inverters
• Battery Chargers
• Motor Drives
Maximum Ratings (Tc = 25 °C unless otherwise specified )
| Symbol | Parameter | Value | Unit | Test Conditions | Note |
| f^DSmax | Drain-Source Breakdown Voltage | 1200 | V | 海=0 V, /d=100 卩A | |
| Id | Continuous Drain Current | 42 | A | 4s=20 V Tc=25 °C | Fig. 18 |
| Pd | Power Dissipation | 208 | W | *=25 °C | Fig. 19 |
| FgS,op | Recommend Gate Source Voltage | -0.25 | V | ||
| J^Smax | Maximum Gate Source Voltage | -0.4 | V | AC (f>lHz) | Note 1 |
| Tj, Tstg | Operating Junction and Storage Temperature Range | -55 to | °C | ||
| 175 | |||||
| 7l | Soldering Temperature | 260 | °C |
Electrical Characteristics
| Symbol | Parameter | Min. | Typ. | Max. | Unit | Test Conditions | Note |
| Static | |||||||
| BVds | Drain-Source Breakdown Voltage | 1200 | - | - | V | 4s=0 V, Zd=100 卩A | |
| A)ss | Zero Gate Voltage Drain Current | — | 11 | 100 | 丹s=1200 V Pgs=0 V | ||
| Igss | Gate-Source Leakage | — | 10 | 250 | nA | 4s=20 V | |
| FGS(th) | Gate-Source Threshold Voltage | 2 | — | 4 | V | Id=5 mA, | Fig. 11 |
| &DS(on) | Drain-Source On-Resistance | — | 78 | 100 | mQ | 国=20 V, Zd=20 A | Fig. 6 |
| Dynamic | |||||||
| Ciss | Input Capacitance | — | 1128 | PF | 4s=0 V,比s=1000 V | Fig. 17 | |
| C^oss | Output Capacitance | — | 86 | f^l.OMHz,瓜=25 mV | |||
| Crss | Reverse Transfer Capacitance | — | 5 | ||||
| Eoss | Coss Stored Energy | - | 44 | 卩J | Fig. 16 | ||
| Qs | Total Gate Charge | — | 52 | nC | moo V | Fig. 12 | |
| figs | Gate-Source Charge | - | 17 | 血=20 A | |||
| Qgd | Gate-Drain Charge | - | 15 | Fgs=-5/+20 V | |||
| td(cn) | Turn-on Delay Time | — | 41 | ns | 丹 s=800 V | ||
| tr | Turn-on Rise Time | - | 21 | Fgs=-5/+20 V | |||
| Turn-off Delay Time | — | 48 | Id=20A | ||||
| tf | Turn-off Fall Time | — | 16 | Ro(ext)=2.5 Q | |||
| RG(int) | Internal Gate Resistance | - | 4 | n | E.O MHz, Vac=25 mV | ||
Test Circuit Schematic
SiC MOSFET
If you are interested in the product, contact 2bvideo.com for more information for more information
The information of 2bvideo.com limited shown above is provided by the user or collected on the network. Video 2B does not guarantee the authenticity,accuracy and legitimacy of 2bvideo.com limited information. Video 2B does not involve legal relationships and disputes between users arising from transactions other than secured transactions on this website. Disputes shall be settled by you through negotiation. If you are the person in charge or relevant employee of this enterprise, if you find that the enterprise information is incorrect or want to manage thiscompany, please contact us jacklee1558@gmail.com, after you claim the enterprise, you can obtain management permission, publish supplyand demand information, bring consulting orders, and remove page advertisements.
Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module ,
Power Diode,
Silicon Transistor,
Bridge Rectifier
