YZPST-RU50 AKA U1620G

2 year ago

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YANGZHOU POSITIONING TECH CO., LTD.

 7 year year

Product details

Fast Recovery Diode YZPST-RU50 AKA U1620G

High Current Capability Fast Recovery Diode TO-263 MUR1620CT

Features:
High surge capacity
Low Forward Voltage Drop.
High Current Capability
Super Fast Switching Speed For High Efficiency

Absolute Maximum Ratings (Ta=25C unless otherwise noted)

Parameter	Symbol	MUR 1610 CT	MUR 1615 CT	MUR 1620 CT		MUR 1640 CT	MUR 1660 CT	Unit
Peak Repetitive Reverse Voltage	VRRM	100	150	200		400	600	V
Working Peak Reverse Voltage	VRW M	70	105	140		280	420	V
DC Blocking Voltage	VR(DC)	100	150	200		400	600	V
Average Rectified Forward Current Per Leg Total Device Total Device	IF(AV)	8 16						A
Peak Rectified Forward Current Per Diode Leg	IFM	16						A
Nonrepetitive Peak Surge Current(Surge applied at rated load conditions half wave, single phase, 60 Hz)	IFSM	180						A
Operating Junction Temperature and Storage Temperature	TJ, Tstg	1.Anode 2.Cathode 3. Anode -55 to +150						C
Maximum Thermal Resistance, Junction−to−Case(Per Leg)	R θJC	3.0			2.0			C/ W

ELECTRICAL CHARACTERISTICS (Per Diode Leg)

Parameter	Symbol	MUR 1610 CT	MUR 1615 CT	MUR 1620 CT	MUR 1640 CT	MUR 1660 CT	Unit
Forward Voltage (Note 1)(IF = 8.0 A, TC = 25°C)	VF	1.0			1.3	1.7	V
Maximum Instantaneous Reverse Current (Note 1) (Rated DC Voltage, TC = 150°C) (Rated DC Voltage, TC = 25°C)	IR	250 10			500 10		μ A
Maximum Reverse Recovery Time (IF = 0.5 A, IR = 1.0 A, IREC = 0.25 A)	TRR	35			35		ns

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YANGZHOU POSITIONING TECH CO., LTD.

 Audited supplier

7 year

Address: Yangzhou, China

Main Product: Semiconductor Triac, Semiconductor Thyristor , Semiconductor Module, Power Diode, Silicon Transistor, Bridge Rectifier

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