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Fast Recovery Diode YZPST-RU50 KAK U1620G

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Product details

 Fast Recovery Diode YZPST-RU50 KAK U1620G

High surge capacity TO-263 Fast Recovery Diode MUR1620CTR

MUR1610CTR-MUR1660CTR

Features:
 High surge capacity
 Low Forward Voltage Drop.
 High Current Capability .
 Super Fast Switching Speed For High Efficiency
Fast Recovery Diode To 263


Absolute Maximum Ratings    (Ta=25C unless otherwise noted)

Parameter

Symbol

MUR 1610 CTR

MUR 1615 CTR

MUR 1620 CTR

MUR 1640 CTR

MUR 1660 CTR

Unit

Peak Repetitive Reverse Voltage

VRRM

100

150

200

400

600

V

Working Peak Reverse Voltage

VRW M

70

105

140

280

420

V

DC Blocking Voltage

VR(DC)

100

150

200

400

600

V

Average Rectified Forward Current

Per Leg      Total Device

IF(AV)

8

16

A

Peak Rectified Forward Current Per Diode Leg (Rated VR, Square Wave, 20 kHz)

IFM

16

A

Nonrepetitive Peak Surge Current(Surge applied at rated load conditions half wave, single phase, 60 Hz)

IFSM

180

1.Cathode 2.Anode 3. Cathode

A

Operating Junction Temperature and Storage Temperature

TJ, Tstg

-55 to +150

C

Maximum Thermal Resistance, JunctiontoCase(Per Leg)

R θJC

3.0

2.0

C/

W

ELECTRICAL CHARACTERISTICS (Per Diode Leg)

Parameter

Symbol

MUR 1610 CTR

MUR 1615 CTR

MUR 1620 CTR

MUR 1640 CTR

MUR 1660 CTR

Unit

Forward Voltage (Note 1)(IF = 8.0 A, TC = 25°C)

VF

1.0

1.3

1.7

V

Maximum Instantaneous Reverse Current (Note 1)

(Rated DC Voltage, TC = 125°C)

(Rated DC Voltage, TC = 25°C)

IR

250

10

500

10

μ A

Maximum Reverse Recovery Time

(IF = 0.5 A, IR = 1.0 A, IREC = 0.25 A)

TRR

35

35

ns



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Audited supplier
7 year
Address: Yangzhou, China


Main Product: Semiconductor Triac, Semiconductor Thyristor , Semiconductor Module, Power Diode, Silicon Transistor, Bridge Rectifier

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