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Thyristor/Diode Modules YZPST-MCD215-20I01
Features
· Industrial standard package
· Electrically insulated base plate
· Heat transfer through aluminium oxide ceramic
insulated metal base plate
· Chip soldered on direct copper bonded AL2O3
ceramic
· Thyristor chip with center gate
|
VDRM/VRRM |
Tj=25°C |
2000 |
V |
|
VRSM |
Tj=25°C |
2100 |
V |
Maximum Ratings
Symbol
Condition
Ratings
Unit
IT(AV)
sin. 180; Tc =85°C,
215
A
ITRMS
sin. 180; Tc =125°C,
340
A
ITSM
Tvj =45°C; 10 ms
8000
A
Tvj =125°C; 10 ms
6800
A
I2t
Tvj =45°C; 8,3…10 ms
320
kA2S
(di/dt)cr
non-repetitive
100
A/us
Viso
A.C. 1s / 1min.
3600/3000
V
Tj
-40 ~ + 125
°C
Tstg
-40 ~ + 125
°C
W
About
150
g
Electrical Characteristics
|
Symbol |
Condition |
Ratings |
Unit |
|
IDRM /IRRM |
AtVDRM, Tj=125°C |
15 |
mA |
|
VT |
On-State Current 200A, Tj=25°C |
1.20 |
V |
|
VT(TO) |
Tj=125°C |
0.80 |
V |
|
tgd |
Tj=25°C |
2 |
us |
|
tq |
Tj=100°C |
200 |
us |
|
IGT/VGT |
Tj=25°C |
150 / 2.0 |
mA/V |
|
VGD |
Tj=125°C |
0.25 |
V |
|
(dv/dt)cr |
Tj=125°C |
1000 |
V/us |
|
IH |
Tj=25°C, max. |
150 |
mA |
|
IL |
Tj=25°C, max. |
200 |
mA |
|
Rth(j-c) |
Per Module |
0.13 |
K/W |
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor ,
Semiconductor Module,
Power Diode,
Silicon Transistor,
Bridge Rectifier
