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IGBT Module SKM195GB066D

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Product details

IGBT Power Module  Type:YZPST-SKM195GB066D

 

Applications

 Inverter for motor drive

 AC and DC servo drive amplifier

 UPS (Uninterruptible Power Supplies)

 Soft switching welding machine

Features

 Low Vce(sat) with Trench Field-stop technology

 Vce(sat) with positive temperature coefficient

 Including fast & soft recovery anti-parallel FWD

 High short circuit capability(10us)

 Low inductance module structure

 Maximum junction temperature 175℃

IGBT

 

 

Absolute Maximum Ratings

Parameter

Symbol

Conditions

Value

Unit

Collector-Emitter Voltage

VCES

VGE=0V, IC =1mA, Tvj=25

650

V

Continuous Collector Current

IC

Tc=100

200

A

Peak Collector Current

ICRM

tp=1ms

400

A

Gate-Emitter Voltage

VGES

Tvj=25

±20

V

Total Power Dissipation

(IGBT-inverter)

Ptot

Tc=25

Tvjmax=175

695

W

IGBT Characteristics

Parameter     Value Unit
Symbol Conditions Min. Typ. Max.  
Gate-Emitter Threshold Voltage VGE(th) VGE=VCE,  IC =3.2mA,Tvj=25 5.1 5.8 6.3 V
    VCE=650V,VGE=0V, Tvj=25     1 mA
Collector-Emitter Cut-off Current ICES VCE=650V,VGE=0V, Tvj=125     5 mA
Collector-Emitter   Ic=200A,VGE=15V, Tvj=25   1.45 1.95 V
Saturation Voltage VCE(sat) Ic=200A,VGE=15V, Tvj=125   1.65   V
Input Capacitance Cies VCE=25V,VGE =0V,   12.3   nF
Reverse Transfer Capacitance Cres f=1MHz, Tvj=25   0.37   nF
Internal Gate Resistance Rgint     1   Ω
Turn-on Delay Time td(on)     48   Ns
 
Rise Time tr IC =200 A   48   Ns
Turn-off Delay Ttime td(off) VCE =300 V   348   Ns
Fall Time tf VGE = ±15V   58   Ns
Energy Dissipation During Turn-on Time Eon RG = 3.6Ω   2.32   mJ
Energy Dissipation During Turn-off Time Eoff Tvj=25   5.85   mJ
Turn-on Delay Time td(on)     48   Ns
 
 
Rise Time tr IC =200 A   48   Ns
Turn-off Delay Time td(off) VCE = 300V   364   Ns
Fall Time tf VGE = ±15V   102   Ns
Energy Dissipation During Turn-on Time Eon RG =3.6Ω   3.08   mJ
Energy Dissipation During Turn-off Time Eoff Tvj=125   7.92   mJ
SC Data Isc Tp≤10us,VGE=15V,Tvj=150 , Vcc=300V,VCEM≤650V   1000   A

Diode Characteristics

Parameter     Value Unit
Symbol Conditions Min. Typ. Max.  
Diode DC Forward Current IF Tc=100   200   A
Diode Peak Forward Current IFRM     400   A
    IF=200A,Tvj=25   1.55 1.95 V
Forward Voltage VF IF=200A,Tvj=125   1.5   V
Parameter     Value Unit
Symbol Conditions Min. Typ. Max.  
Recovered Charge Qrr     8.05   uC
IF =200 A
VR=300V
Peak Reverse Recovery Current Irr -diF/dt =4200A/us   148   A
Reverse Recovery Energy Erec Tvj=25   1.94   mJ
Recovered Charge Qrr     16.9   uC
IF =200 A
VR=300V
Peak Reverse Recovery Current Irr -diF/dt =4200A/us   186   A
Reverse Recovery Energy Erec Tvj=125   3.75   mJ

Module CharacteristicsTC=25°C unless otherwise specified

Parameter Symbol Conditions Value Unit
Min. Typ. Max.
Isolation voltage Visol t=1min,f=50Hz 2500     V
Maximum Junction Temperature Tjmax       150
Operating Junction Temperature Tvj op   -40   125
Storage Temperature Tstg   -40   125
    per IGBT-inverter     0.19 K/W
Junction-to Case R θjc per Diode-inverter     0.31 K/W
Case to Sink R θcs Conductive grease applied   0.085   K/W
Module ElectrodesTorque Mt Recommended(M5) 2.5   5 N · m
Module-to-SinkTorque Ms Recommended(M6) 3   5 N · m
Weight of Module G     150   g

Package Dimensions

YZPST-SKM195GB066D Package Dimensions

 

 

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Address: Yangzhou, China


Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module, Power Diode, Silicon Transistor, Bridge Rectifier

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