IGBT Module 1200V150A 150B120F23

IGBT Module 1200V150A 150B120F23

2 year ago

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YANGZHOU POSITIONING TECH CO., LTD.

 7 year year

Product details

IGBT Power Module YZPST-150B120F23

VCE=1200V IC=150A

Applications
Inverter for motor drive
AC and DC servo drive amplifier
UPS (Uninterruptible Power Supplies)
Soft switching welding machine
Features
Low Vce(sat) with Trench Field-stop technology
Vce(sat) with positive temperature coefficient
Including fast & soft recovery anti-parallel FWD
High short circuit capability(10us)
Low inductance module structure

Maximum junction temperature 175℃

Absolute Maximum Ratings

Parameter	Symbol	Conditions	Value	Unit
Collector-Emitter Voltage	VCES	VGE=0V, IC =1mA, Tvj=25℃	1200	V
Continuous Collector Current	IC	Tc=100℃	150	A
Peak Collector Current	ICRM	tp=1ms	300	A
Gate-Emitter Voltage	VGES	Tvj=25℃	±20	V
Total Power Dissipation (IGBT-inverter)	Ptot	Tc=25℃ Tvjmax=175℃	968	W

IGBT Characteristics

Parameter			Value			Unit
Parameter	Symbol	Conditions	Min.	Typ.	Max.
Gate-Emitter Threshold Voltage	VGE(th)	VGE=VCE, IC =4mA,Tvj=25℃	5.2	6	6.8	V
		VCE=1200V,VGE=0V, Tvj=25℃			1	mA
Collector-Emitter Cut-off Current	ICES	VCE=1200V,VGE=0V, Tvj=125℃			5	mA
Collector-Emitter		Ic=150A,VGE=15V, Tvj=25℃		1.8	2.1	V
Saturation Voltage	VCE(sat)	Ic=150A,VGE=15V, Tvj=125℃		2		V
Input Capacitance	Cies			9.8		nF
Output Capacitance	Coes	VCE=25V,VGE =0V,		0.82		nF
Reverse Transfer Capacitance	Cres	f=1MHz, Tvj=25℃		0.48		nF
Internal Gate Resistance	Rgint			2.5		Ω
Turn-on Delay Time	td(on)			185		Ns
Turn-on Delay Time	td(on)			185		Ns
Rise Time	tr	IC =150 A		55		Ns
Turn-off Delay Ttime	td(off)	VCE = 600 V		360		Ns
Fall Time	tf	VGE = ±15V		115		Ns
Energy Dissipation During Turn-on Time	Eon	RG = 5.1Ω		15.4		mJ
Energy Dissipation During Turn-off Time	Eoff	Tvj=25℃		11.6		mJ
Turn-on Delay Time	td(on)			200		Ns


Rise Time	tr	IC =150 A		60		Ns
Turn-off Delay Time	td(off)	VCE = 600 V		420		Ns
Fall Time	tf	VGE = ±15V		120		Ns
Energy Dissipation During Turn-on Time	Eon	RG =5.1Ω		23.2		mJ
Energy Dissipation During Turn-off Time	Eoff	Tvj=125℃		17		mJ
		Tp≤10us,VGE=15V,
SC Data	Isc	Tvj=150℃,Vcc=600V,		500		A
		VCEM≤1200V

Diode Characteristics

Parameter			Value			Unit
Parameter	Symbol	Conditions	Min.	Typ.	Max.
Diode DC Forward Current	IF	Tc=100℃		150		A
Diode Peak Forward Current	IFRM			300		A
		IF=150A,Tvj=25℃		1.8	2.3	V
Forward Voltage	VF	IF=150A,Tvj=125℃		1.85		V

Parameter			Value			Unit
Parameter	Symbol	Conditions	Min.	Typ.	Max.
Recovered Charge	Qrr			13.4		uC

		IF =150 A
Peak Reverse Recovery Current	Irr	VR=600V		143		A
Reverse Recovery Time	trr	-diF/dt =2200A/us		160		ns
Reverse Recovery Energy	Erec	Tvj=25℃		9.1		mJ
Recovered Charge	Qrr			26.1		uC

		IF =150 A
Peak Reverse Recovery Current	Irr	VR=600V		178		A
Reverse Recovery Time	trr	-diF/dt =2200A/us		440		ns
Reverse Recovery Energy	Erec	Tvj=125℃		15.4		mJ

Module CharacteristicsTC=25°C unless otherwise specified

Parameter	Symbol	Conditions	Value			Unit
Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Isolation voltage	Visol	t=1min,f=50Hz	2500			V
Maximum Junction Temperature	Tjmax				150	℃
Operating Junction Temperature	Tvjop		-40		125	℃
Storage Temperature	Tstg		-40		125	℃
		per IGBT-inverter			0.155	K/W
Junction-to Case	R θjc	per Diode-inverter			0.292	K/W
Case to Sink	R θcs	Conductive grease applied		0.05		K/W
Module ElectrodesTorque	Mt	Recommended(M5)	2.5		5	N·m
Module-to-SinkTorque	Ms	Recommended(M6)	3		5	N·m
Weight of Module	G			150		g

Package Dimensions

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YANGZHOU POSITIONING TECH CO., LTD.

 Audited supplier

7 year

Address: Yangzhou, China

Main Product: Semiconductor Triac , Semiconductor Thyristor, Semiconductor Module, Power Diode, Silicon Transistor, Bridge Rectifier

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