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Dual Thyristor Modules
|
VDRM/VRRM |
|
1600/1600 |
V |
|
VRSM |
|
1700 |
V |
Symbol
Condition
Ratings
Unit
IT(AV)
sin. 180; Tc =85°C,
95
A
ITSM
Tvj =25°C; 10 ms
2000
A
I2t
Tvj =25°C; 8,3…10 ms
20
kA2S
(di/dt)cr
140
A/us
Viso
A.C. 1s / 1min.
3600/3000
V
Tj
-40 ~ + 125
°C
Tstg
-40 ~ + 125
°C
W
-
g
Electrical Characteristics
Symbol
Condition
Ratings
Unit
IDRM /IRRM
AtVDRM, Tj=125°C
15
mA
VT
On-State Current 300A, Tj=25°C
1.63
V
VT(TO)
Tj=125°C
0.9
V
tgd
Tj=25°C
1
us
tq
Tj=125°C
100
us
IGT/VGT
Tj=25°C
150 / 3
mA/V
VGD
Tj=125°C
0.25
V
(dv/dt)cr
Tj=125°C
1000
V/us
IH
Tj=25°C, typ. / max.
140/240
mA
IL
Tj=25°C, typ. / max.
260/550
mA
Rth(j-c)
Per Module
0.14
K/W
Outline Drawing
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode,
Silicon Transistor ,
Bridge Rectifier
