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Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
VDSS = 1000V
ID25 = 38A
RDS(on) ≤ 210mΩ
trr ≤ 300ns
Features
International Standard Package
Low Intrinsic Gate Resistance
miniBLOC with Aluminum Nitride Isolation
Low Package Inductance
Fast Intrinsic Rectifier
Low RDS(on) and QG
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode Power Supplies
AC Motor Control
High Speed Power Switching Appliccation
| Symbol | Test Conditions | Maximum Ratings | |
| VDSS | TJ = 25℃ to 150℃ | 1000 | V |
| VDGR | TJ = 25℃ to 150℃, RGS = 1MΩ | 1000 | V |
| VGSS | Continuous |
土30 |
V |
| VGSM | Transient | 土40 | V |
| ID25 | TC = 25℃ | 38 | A |
| IDM | TC = 25℃, Pulse Width Limited by TJM | 120 | A |
| I A | TC = 25℃ | 19 | A |
| EAS | TC = 25℃ | 2 | J |
| dv/dt | IS < IDM , VDD < VDSS , TJ < 150℃ | 20 | V/ns |
| PD | T = 25℃ | 1000 | W |
| TJ | -55 ... +150 | ℃ | |
| TJM | 150 | ℃ | |
| TSTG | -55 ... +150 | ℃ | |
| VISOL | 50/60 Hz, RMS, t = 1minute | 2500 | V~ |
| I ISOL £ 1mA, t = 1s | 3000 | V~ | |
| MD | Mounting Torque for Base Plate | 1.5/13 1.3/11.5 | Nm/lb.in Nm/Ib.in |
| Terminal Connection Torque | |||
| Weight | 30 | g | |
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