Product
Product
Supplier
Search
Get Quote
730 people are quoting
1200V 900A IGBT Module
P/N: YZPST-G900WB120B6TC
PRODUCT FEATURES
IGBT CHIP(Trench+FS)
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Temperature sense included
APPLICATIONSAC motor control
Motion/servo control
Inverter and power supplies
Photovoltaic/Fuel cell
IGBT-ABSOLUTE MAXIMUM RATINGS(TC =25°C unless otherwise specified)
| Symbol | Parameter/Test Conditions | Values | Unit | |
| VCES | Collector Emitter Voltage | TJ=25℃ | 1200 | V |
| VGES | Gate Emitter Voltage | ±20 | ||
| IC | DC Collector Current | TC=25℃, TJmax =175℃ | 880 | |
| TC=95℃, TJmax =175℃ | 900 | A | ||
| ICM | Repetitive Peak Collector Current | tp=1ms | 1200 | |
| Ptot | Power Dissipation Per IGBT | TC=25℃, TJmax =175℃ | 3125 | W |
Diode-ABSOLUTE MAXIMUM RATINGS ( TC =25°C unless otherwise specified)
| Symbol | Parameter/Test Conditions | Values | Unit | |
| VRRM | Repetitive Reverse Voltage | TJ=25℃ | 1200 | V |
| IF(AV) | Average Forward Current | 900 | A | |
| IFRM | Repetitive Peak Forward Current | tp=1ms | 1200 | |
| I2t | TJ =150℃, t=10ms, VR=0V | 45 | kA2s | |
IGBT-inverter
ELECTRICAL CHARACTERISTICS (TC =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
Min.
Typ.
Max.
Unit
VGE(th)
Gate Emitter Threshold Voltage
VCE=VGE , IC=24mA
5
5.8
6.5
Collector Emitter
IC=900A, VGE=15V, TJ=25℃
1.9
2.3
VCE(sat)
Saturation Voltage
IC=900A, VGE=15V, TJ=125℃
2.2
V
IC=900A, VGE=15V, TJ=150℃
2.25
ICES
Collector Leakage Current
VCE=1200V, VGE=0V, TJ=25℃
1
mA
VCE=1200V, VGE=0V, TJ=150℃
10
IGES
Gate Leakage Current
VCE=0V,VGE=±20V, TJ=25℃
-400
400
nA
RGint
Integrated Gate Resistor
0.7
Ω
Qg
Gate Charge
VCE=900V, IC=900A , VGE=15V
3.1
µC
Cies
Input Capacitance
VCE=25V, VGE=0V, f =1MHz
43.2
nF
Cres
Reverse Transfer Capacitance
2.07
nF
td(on)
Turn on Delay Time
VCC=600V,IC=900A RG =1.5Ω ,
TJ=25℃
100
ns
VGE=±15V,
TJ=150℃
110
ns
tr
Rise Time
Inductive Load
TJ=25℃
85
ns
TJ=150℃
95
ns
td(off)
Turn off Delay Time
VCC=600V,IC=900A RG =1.5Ω ,
TJ=25℃
530
ns
VGE=±15V,
TJ=150℃
580
ns
tf
Fall Time
Inductive Load
TJ=25℃
65
ns
TJ=150℃
215
ns
TJ=25℃
55
mJ
Eon
Turn on Energy
TJ=125℃
85
mJ
VCC=600V,IC=900A RG =1.5Ω ,
TJ=150℃
95
mJ
VGE=±15V,
TJ=25℃
45
mJ
Eoff
Turn off Energy
Inductive Load
TJ=125℃
58
mJ
TJ=150℃
63
mJ
ISC
Short Circuit Current
tpsc≤10µs , VGE=15V
2200
A
TJ=150℃,VCC=800V
RthJC
Junction to Case Thermal Resistance （Per IGBT）
0.048
K /W
Package Outline
If you are interested in the product, contact 2bvideo.com for more information for more information
The information of 2bvideo.com limited shown above is provided by the user or collected on the network. Video 2B does not guarantee the authenticity,accuracy and legitimacy of 2bvideo.com limited information. Video 2B does not involve legal relationships and disputes between users arising from transactions other than secured transactions on this website. Disputes shall be settled by you through negotiation. If you are the person in charge or relevant employee of this enterprise, if you find that the enterprise information is incorrect or want to manage thiscompany, please contact us jacklee1558@gmail.com, after you claim the enterprise, you can obtain management permission, publish supplyand demand information, bring consulting orders, and remove page advertisements.
Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode ,
Silicon Transistor,
Bridge Rectifier
