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Silicon PNP transistor in a TO-220F Plastic Package.
Features
High fT, complementary pair with 2SC5171.
TO-220F 2SA1930 Silicon PNP transistor High fT complementary pair with 2SC5171
Absolute Maximum Ratings(Ta=25℃)
|
Parameter |
Symbol |
Rating |
Unit |
|
Collector to Base Voltage |
VCBO |
-180 |
V |
|
Collector to Emitter Voltage |
VCEO |
-180 |
V |
|
Emitter to Base Voltage |
VEBO |
-5.0 |
V |
|
Collector Current - Continuous |
IC |
-2.0 |
A |
|
Base Current |
IB |
-1.0 |
A |
|
Collector Power Dissipation |
PC |
2.0 |
W |
|
Collector Power Dissipation |
PC(Tc=25℃) |
20 |
W |
|
Junction Temperature |
Tj |
150 |
℃ |
|
Storage Temperature Range |
Tstg |
-55～150 |
℃ |
Electrical Characteristics(Ta=25℃)
|
Parameter |
Symbol |
Test Conditions |
Min |
Typ |
Max |
Unit
|
|
Collector-Emitter Breakdown Voltage |
VCEO |
IC=-10mA IB=0 |
-180 |
|
|
V |
|
Collector Cut-Off Current |
ICBO |
VCB=-180V IE=0 |
|
|
-5.0 |
μA |
|
Emitter Cut-Off Current |
IEBO |
VEB=-5.0V IC=0 |
|
|
-5.0 |
μA |
|
DC Current Gain |
hFE(1) |
VCE=-5.0V IC=-100mA |
100 |
|
320 |
|
|
hFE(2) |
VCE=-5.0V IC=-1.0A |
50 |
|
|
|
|
|
Collector to Emitter Saturation Voltage |
VCE(sat) |
IC=-1.0A IB=-100mA |
|
-0.24 |
-1.0 |
V |
|
Base to Emitter Voltage |
VBE |
VCE=-5.0V IC=-1.0A |
|
-0.68 |
-1.5 |
V |
|
Transition Frequency |
fT |
VCE=-5.0V IC=-300mA |
|
200 |
|
MHz |
|
Collector output capacitance |
Cob |
VCB=-10V IE=0 f=1.0MHz |
|
26 |
|
pF |
Package Dimensions
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