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SCR S5560-12M TO3PA 20-50MA

2 year ago
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Product details
S5560 55A SCRs
High voltage capacity 1200V S5560-12M 55A SCR
YZPST-S5560-12M
FEATURES
 High thermal cycling performance
 High voltage capacity
 Very high current surge capability
APPLICATIONS
 Line rectifying 50/60 Hz
 Softstart AC motor control
 DC Motor control
 Power converter
 AC power control

 Lighting and temperature control

TO-3P SCR

ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Value Unit
Storage junction  temperature range Tstg -40 ~ 150
Operating junction temperature range Tj -40~ 125
Repetitive peak off-state voltage (T =25℃) VDRM 1200/1600 V
Repetitive peak reverse voltage (T =25℃) VRRM 1200/1600 V
Non repetitive surge peak Off-state voltage VDSM VDRM +100 V
Non repetitive peak reverse voltage VRSM VRRM +100 V
RMS on-state current TO-3PIns.(TC=80℃) IT(RMS) 55 A
TO-247(TC=85℃)
Non repetitive surge peak on-state current ITSM 550 A
Average on-state current (180° conduction angle) IT(AV) 35 A
I2t value for fusing (tp= 10ms) I2t 1500 A2 S
Critical rate of rise of on-state current di/dt 150 A/μS
(I =2×IGT, tr ≤ 100 ns)
Peak gate current IGM 5 A
Average gate power dissipation PG(AV) 2 W

Thermal Resistances
Symbol Parameter Value Unit
TO-3P 0.65
Rth(j-c) Junction to case (DC) TO-247 0.6 ℃/W
ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified)
Symbol Test Condition Value Unit
IGT V = 12V R = 140Ω MAX. 60 mA
VGT MAX. 1.3 V
VGD VD=VDRM Tj= 125 MIN. 0.2 V
IL IG= 1.2IGT MAX. 250 mA
IH IT=50mA MAX. 200 mA
dV/dt VD=2/3VDRM Gate Open  Tj=125℃ MIN. 1000 V/μs

STATIC CHARACTERISTICS
Symbol Parameter Value(MAX.) Unit
VTM ITM =80A tp=380μs Tj =25℃ 1.8 V
IDRM VD=VDRM VR=VRRM Tj =25℃ 20 μA
IRRM Tj =125℃ 8 mA

TO-3P Package Mechanical Data

TO-3P Package Mechanical Data


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7 year
Address: Yangzhou, China


Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module , Power Diode, Silicon Transistor, Bridge Rectifier

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