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GENERAL DESCRIPTION
Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is requiredin all four quadrants.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)
| Parameter | Symbol | Typ | Unit |
| Repetitive peak off-state voltages | VDRM | 600 | V |
| VRRM | |||
| RMS on-state current | IT(RMS) | 12 | A |
| Non-repetitive peak | ITSM | 95 | A |
| on-state current | |||
| Max. Operating Junction | Tj | 110 | oC |
| Temperature | |||
| Storage Temperature | Tstg | -45~ 150 | oC |
ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit | |
| Repetitive peak off-state voltages | VDRM | 600 | V | ||||
| VRRM | |||||||
| RMS on-state current | IT(RMS) | full sine wave; Tmb ≤107 oC | — | 12 | — | A | |
| On-state voltage | VT | IT= 15A | — | 1.4 | 1.65 | V | |
| Holding current | IH | VD = 12 V; IGT = 0.1 A | 60 | mA | |||
| T2+G+ | — | — | 50 | ||||
| Gate trigger | T2+G- | — | — | 50 | |||
| current | T2-G- | IGT | VD = 12 V; IT = 0.1 A | — | — | 50 | mA |
| T2-G+ | 100 | ||||||
| T2+G+ | — | — | 60 | ||||
| Latching | T2+G- | 90 | |||||
| current | T2-G- | IL | VD = 12 V; IGT = 0.1 A | 60 | mA | ||
| T2-G+ | — | — | 90 | ||||
| Gate trigger voltage | VGT | VD = 12 V; IT = 0.1 A | 0.7 | 1.5 | V | ||
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode,
Silicon Transistor,
Bridge Rectifier
