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With low holding and latching current, BT136 Series triacs are especially recommended for use on middle and small resistance type power load.
MAIN FEATURES:
|
symbol |
value |
unit |
|
IT(RMS) |
4 |
A |
|
VDRM/VRRM |
600/800 |
V |
|
VTM |
≤1.7 |
V |
ABSOLUTE MAXIMUM RATINGS:
Parameter
Symbol
Value
Unit
Storage junction temperature range
Tstg
-40~150
℃
Operating junction temperature range
Tj
-40~125
℃
Repetitive peak off-state voltage (Tj=25℃)
VDRM
600/800
V
Repetitive peak reverse voltage (Tj=25℃)
VRRM
600/800
V
RMS on-state current
IT(RMS)
4
A
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
ITSM
25
A
I2t value for fusing (tp=10ms)
I2t
3.1
A2s
Critical rate of rise of on-state current (IG=2 × IGT)
Ⅰ- Ⅱ-Ⅲ
50
dI/dt
Ⅳ
10
A/ μs
Peak gate current
IGM
2
A
Average gate power dissipation
PG(AV)
0.5
W
Peak gate power
PGM
5
W
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
| Parameter | Value | ||||||
| Test Condition | Quadrant | T | D | E | Unit | ||
| Ⅰ- Ⅱ-Ⅲ | 5 | 5 | 10 | ||||
| IGT | VD=12V, | Ⅳ | 5 | 10 | 25 | mA | |
| VGT | RL=33Ω | Ⅰ- Ⅱ-Ⅲ-Ⅳ | MAX | 1.3 | V | ||
| VGD | VD=VDRM | Ⅰ- Ⅱ-Ⅲ-Ⅳ | MIN | 0.2 | V | ||
| IH | IT=100mA | MAX | 5 | 10 | 20 | mA | |
| Ⅰ-Ⅲ-Ⅳ | 8 | 10 | 20 | ||||
| IL | IG=1.2IGT | Ⅱ | MAX | 12 | 15 | 35 | mA |
| VD=0.66×VDRM Tj=125℃ Gate open | |||||||
| dV/dt | MIN | 10 | 20 | 50 | V/ µs | ||
STATIC CHARACTERISTICS
| Symbol | Test Condition | Value | Unit | ||
| VTM | ITM=5A tp=380μs | Tj=25℃ | MAX | 1.7 | V |
| IDRM | Tj=25℃ | 5 | µA | ||
| IRRM | VDRM= VRRM | Tj= 125℃ | MAX | 0.5 | mA |
THERMAL RESISTANCES
| Symbol | Test Condition | Value | Unit | |
| TO-252-4R | 2.8 | |||
| Rth(j-c) | junction to case(AC) | TO-220B(Non-Ins)/ TO-220C | 2.6 | ℃/W |
PACKAGE MECHANICAL DATA
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode,
Silicon Transistor,
Bridge Rectifier
