TRIAC BTA12-800BW TO220

2 year ago

46 0

YANGZHOU POSITIONING TECH CO., LTD.

 7 year year

Product details

YZPST-BTA12-800BW

●Product features
Single mesa structure (Single Mesa),
Table glass passivation process,
Voltage stability
The ability of strong current shock resistance
The applicable model： BTA12
The main purpose
Washing machine, the hair straightened
Solid state relay, AC motor speed control
●Package

TO-220A

BTA12-600C

Main Feature (Tj=25℃)

Symbol	Value	Unit
IT (RMS)	12	A
VDRM / VRRM	600/800	V
VTM	1.55	V

Absolute ratings (Limiting Values)

Symbol	Parameter	Value	Unit
ITSM	Non repetitive surge peak on-state Current (tp=10ms)	115	A
I2t	(tp=10ms)	70	A2S
dI/dt	IG=2IGT ，tr≤100ns,Tj=125℃	50	A/ μs
IGM	Peak gate current(tp=20us)	4	A
PG(AV)	Average gate power	1	W
Tstg Tj	Storage temperature Operating junction temperature	-40--+150 -40--+125	℃

Thermai Resistances

Symbol
Symbol	Parameter		Value	Unit
		TO-220A	2.3
Rth (j-c)	Junction to case	TO-220B/TO-220C	1.4	℃/W
		TO-220F	3.9

Electrical characteristics (Tj=25℃ unless otherwise stated)

Symbol	Test Conditions		Value						Unit
Symbol	Test Conditions		TW	SW	CW	BW	C	B
IGT	VD=12V, RL=30Ω	ⅠⅡⅢ	≤5	≤10	≤25	≤50	≤25	≤50	mA
IGT	VD=12V, RL=30Ω	Ⅳ	----	----	----	----	≤50	≤100	mA
IDRM	VD=VDRM	Tj=25℃	≤5						μA
IDRM	VD=VDRM	Tj=125℃	≤1						mA
IRRM	VD=VRRM	Tj=25℃	≤5						μA
IRRM	VD=VRRM	Tj=125℃	≤1						mA
		ⅠⅢ	≤10	≤25	≤50	≤70	≤40	≤50
IL	IG=1.2IGT	Ⅳ	----	----	----	----	≤40	≤50	mA
		Ⅱ	≤15	≤30	≤60	≤80	≤80	≤100
VGT	VD=12V ,RL=30Ω		≤1.3						V
VGD	VD=VDRM, Tj=125℃RL=3.3KΩ		≥0.2						V
VTM	ITM=17A,tp=380 μs		1.55						V
IH	VD=12V ，IT=200mA		≤20	≤25	≤35	≤50	≤25	≤50	mA
dV/dt	VD=67%VDRM,		≥40	≥	≥	≥ 1000	≥	≥400	v/ μs
dV/dt	GateOpen, Tj=125℃		≥40	100	400	≥ 1000	200	≥400	v/ μs

Measure of package

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YANGZHOU POSITIONING TECH CO., LTD.

 Audited supplier

7 year

Address: Yangzhou, China

Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module, Power Diode, Silicon Transistor , Bridge Rectifier

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