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The MJD31C is Silicon NPN power transistors ，designed for medium power linear switching applications.
ABSOLUTE MAX I MUM RATINGS
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Continuous Collector Current
3
A
ICM
Collector current-Pulse
5
A
IB
Base Current
1
A
PTOT
Total dissipation at Tcase=25 ℃
15
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55〜 150
℃
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
|
Symbol |
Parameter |
Test Condition |
Value |
Unit |
||
|
Min |
Type |
Max |
||||
|
ICEO |
Collector Cutoff Current |
VCE= 60 V |
|
|
0.3 |
mA |
|
IEBO |
Emitter Cutoff Current |
VEB= 5 V |
|
|
1 |
mA |
|
VCEO（SUS） |
Collector-Emitter Sustaining Voltage |
IC= 30mA |
100 |
|
|
V |
|
VCEsat |
Collector-Emitter Saturation Voltage |
IC=3A IB=0.375A |
|
|
1.2 |
V |
|
VBE |
Base-Emitter On Voltage |
IC=3A ; VCE=4V |
|
|
1.8 |
V |
|
hFE- 1 |
DC current gain |
IC= 1A ; VCE=4V |
25 |
|
|
|
|
hFE-2 |
DC current gain |
IC=3A ; VCE=4V |
10 |
|
50 |
|
|
fT |
Transiton frequency |
IC=0.5A ; VCE= 10V |
3 |
|
|
MHz |
PACKAGE MECHANICAL DATA
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor ,
Semiconductor Module,
Power Diode,
Silicon Transistor,
Bridge Rectifier
