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YZPST-BTA204X-800E
TO-220F BTA204X-800E triac have good performance at dv/dt
TO-220F
|
Symbol |
Value |
Unit |
|
IT(RMS) |
4 |
A |
|
VDRM / VRRM |
≥800 |
V |
|
ITSM |
25 |
A |
Absolute ratings (Limiting Values)
|
Symbol |
Parameter |
Value |
Unit |
|
IT (RMS) |
Rms on-state current(full sine wave) |
4 |
A |
|
ITSM
|
Non- repetitive Peak on-state Current (Tj=25℃,tp=20ms) |
25
|
A
|
|
I2t |
I2t for fusing(tp=10ms) |
3.1 |
A2S |
|
IGM |
Peak gate current |
2 |
A |
|
VGM |
Peak gate voltage |
5 |
V |
|
PGM |
Peak gate power |
5 |
W |
|
PG(AV) |
Average gate power |
0.5 |
W |
|
di/dt
|
Repetitive rate of rise of on-state current after triggering (IT=6A,IG=0.2A,dlG/dt=0.2A/us) |
100
|
A/μs
|
|
Tstg Tj |
Storage temperature Operating junction temperature |
-40--+150 -40--+110 |
℃ |
|
Symbol |
Parameter |
Condition |
Min |
Type |
Max |
Unit |
|
Rth j-mb |
Thermal Resistance, Junction to mb |
One cycle Half cycle |
—— —— |
—— —— |
3.0 3.7 |
K/W K/W |
|
Rth j-a
|
Thermal Resisatance,Junction to ambient |
in free air
|
——
|
60
|
——
|
K/W
|
Electrical characteristics (Tj=25℃ unless otherwise stated)
|
Symbol |
Conditions |
Min |
Type |
Max |
Unit |
|
|
|
BT204- |
|
|
|
|
|
|
|
VD=12V IT=0.1A T2+ G+ |
|
|
|
||
|
|
T2+ G- |
|
35 |
mA |
||
|
IGT |
T2- G- |
—— |
35 |
mA |
||
|
|
|
—— |
35 |
mA |
||
|
|
|
—— |
|
|
||
|
IH |
VD=12V IGT=0.1A |
|
2 |
12 |
mA |
|
|
IL |
IG=2×IGT |
Ⅰ-Ⅲ |
|
|
6 |
mA |
|
Ⅱ |
|
|
9 |
|||
|
VTM |
IT=8A |
—— |
1.25 |
1.7 |
V |
|
|
IDRM |
V DRM=600V |
|
|
10 |
μA |
|
|
IRRM |
VRRM=600V |
|
|
10 |
μA |
|
|
|
VD=12V IT=0.1A |
|
0.7 |
|
V |
|
|
VGT |
VD=400V IT=0.1A |
0.25 |
0.4 |
1.5 |
V |
|
|
|
Tj=125℃ |
|
|
|
|
|
|
|
VD=VDRM（MAX） |
|
|
|
mA |
|
|
ID |
Tj=125℃ |
—— |
0.1 |
0.5 |
||
Dynamic characteristics (Tj=25℃ unless otherwise stated)
|
Symbol |
Conditions |
Min |
Type |
Max |
Unit |
|
dVD/dt
|
VDM=67%VDm（MAX） Tj=125℃ |
30
|
|
|
V/μs
|
|
tgt
|
ITm=12A VD=VDRM（MAX） IG=0.1A dlG/dt=5A/ms |
|
2
|
——
|
μs
|
PACKAGE MECHANICAL DATA
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor ,
Semiconductor Module,
Power Diode,
Silicon Transistor,
Bridge Rectifier
