TRIAC BTB24-1200WRG TO-263

TRIAC BTB24-1200WRG TO-263

2 year ago

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YANGZHOU POSITIONING TECH CO., LTD.

 7 year year

Product details

BTA24/BTB24 Series 25A Triacs

YZPST-BTB24-1200WRG

DESCRIPTION:
With high ability to withstand the shock loading of Large current, BTA24/BTB24 series triacs provide high dv/dt rate with strong resistance to electromagnetic interface.

With high commutation performances, 3 quadrants products especially recommended for use on inductive load. From all three terminals to external heatsink, BTA24 provides a rated insulation voltage of 2500 VRMS complying with UL standards

YZPST-BTA24-800BW

MAIN FEATURES:

symbol	value	unit
IT(RMS)	25	A
VDRM/VRRM	600/800/1200/1600	V
VTM	≤1.5	V

ABSOLUTE MAXIMUM RATINGS:

Parameter	Symbol	Value	Unit
Storage junction temperature range	Tstg	-40~150	℃
Operating junction temperature range	Tj	-40~125	℃
Repetitive peak off-state voltage (Tj=25℃)	VDRM	600/800/1200/1600	V
Repetitive peak reverse voltage (Tj=25℃)	VRRM	600/800/1200/1600	V
RMS on-state current	IT(RMS)	25	A
Non repetitive surge peak on-state current (full cycle, F=50Hz)	ITSM	250	A
I2t value for fusing (tp=10ms)	I2t	340	A2s
Critical rate of rise of on-state current(IG=2 × IGT)	dI/dt	50	A/ μs

Peak gate current	IGM	4	A
Average gate power dissipation	PG(AV)	1	W
Peak gate power	PGM	10	W

ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)

3 Quadrants：

Parameter				Value
Parameter	Test Condition	Quadrant		CW	BW	Unit
IGT	VD=12V,			35	50	mA
VGT	RL=33Ω	Ⅰ- Ⅱ-Ⅲ	MAX	1.3		V
VGD	VD=VDRM	Ⅰ- Ⅱ-Ⅲ	MIN	0.2		V
IH	IT=100mA		MAX	60	80	mA
		Ⅰ-Ⅲ		70	90
IL	IG=1.2IGT	Ⅱ	MAX	80	100	mA
	VD=2/3VDRM Tj=125℃ Gate open
dV/dt	VD=2/3VDRM Tj=125℃ Gate open		MIN	1000	1500	V/ µs

4 Quadrants：

Parameter				Value
Parameter	Test Condition	Quadrant		C	B	Unit
		Ⅰ- Ⅱ-Ⅲ		25	50	mA
IGT	VD=12V,	Ⅳ		50	70	mA
VGT	RL=33Ω	ALL	MAX	1.5		V
VGD	VD=VDRM	ALL	MIN	0.2		V
IH	IT=100mA		MAX	60	75	mA
		Ⅰ-Ⅲ- Ⅳ		70	80
IL	IG=1.2IGT	Ⅱ	MAX	90	100	mA
	VD=2/3VDRM Tj=125℃ Gate open
dV/dt	VD=2/3VDRM Tj=125℃ Gate open		MIN	200	500	V/ µs

THERMAL RESISTANCES

Symbol	Test Condition		Value	Unit
		TO-220A(Ins）	1.5
		TO-220F(Ins）	1.6
		TO-263	2.1	℃/W
Rth(j-c)	junction to case(AC)	TO-3P	0.68

PACKAGE MECHANICAL DATA

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YANGZHOU POSITIONING TECH CO., LTD.

 Audited supplier

7 year

Address: Yangzhou, China

Main Product: Semiconductor Triac, Semiconductor Thyristor , Semiconductor Module, Power Diode, Silicon Transistor, Bridge Rectifier

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