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SCR TYN616 TO220

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Product details

SCR P/N:YZPST-TYN616 

Package

TO-220C

TYN616 TO-220C


Main   Feature   Tj=25℃

Symbol

Value

Unit

IT (RMS)

16

A

VDRM   / VRRM

600

V

IGT

2 to15

mA

Absolute ratings (Limiting Values)

Symbol

Parameter

Value

Unit

IT (RMS)

RMS on-state current (180 °conduction angle)

16

A

IT(AV)

AV on-state current (180 °conduction angle)

10

A

ITSM

Non repetitive surge peak on-state

Current (tp= 10ms)

160

A

I2t

(tp= 10ms)

100

A2S

IGM

Peak gate current(tp=20us)

4

A

PGM

Peak gate power

5

W

PG(AV)

Average gate power

1

W

Tstg

Tj

Storage temperature

Operating junction temperature

-40--+150

-40--+125

Thermai Resistances

 

Symbol

Parameter

Value

Unit

Rth (j-c)

Junction to case

1. 1

K/W

Rth (j-a)

Junction to ambient

55

K/W

Electrical characteristics (Tj=25℃ unless otherwise stated)

Symbol Test Conditions Value Unit
Min Type Max
IGT VD=6V, RL= 100Ω 2 5 15 mA
VGT VD= 12V, RL= 100Ω ----- 0.7 0.8 V
VGD VD=VDRM, RL=3.3KΩ Tj=110℃ 0.2 ----- ----- V
IH IT= 100mA    Gate Open ----- 30 40 mA
dV/dt VD=67%VDRM, GateOpen,  Tj=125℃ 400 v/μs
----- -----
VTM IT=24A,tp=380μs ----- ----- 1.7 V
IDRM VD=VDRM Tj=25℃ ----- ----- 10 uA
Irrm VR=VRRM Tj=125℃ ----- ----- 1 mA

Measure of   package

YZPST-TYN616 TO-220C



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7 year
Address: Yangzhou, China


Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module, Power Diode, Silicon Transistor, Bridge Rectifier

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