IGBT Module GD600HFX170C6S

IGBT Module GD600HFX170C6S

2 year ago

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YANGZHOU POSITIONING TECH CO., LTD.

 7 year year

Product details

IGBT Module YZPST-600HFX170C6S

1700V/600A 2 in one-package

General Description
IGBT Power Module provides ultra
low conduction loss as well as short circuit ruggedness.
They are designed for the applications such as
general inverters and UPS.

YZPST-GD600HFX170C6S
Features
. Low VCE(sat) Trench IGBT technology
. 10μs short circuit capability
. VCE(sat) with positive temperature coefficient
. Maximum junction temperature 175oC
. Low inductance case
. Fast & soft reverse recovery anti-parallel FWD
. Isolated copper baseplate using DBC technology

Typical Applications
. Inverter for motor drive
. AC and DC servo drive amplifier
. Uninterruptible power supply

IGBT

Symbol	Description	Value	Unit
VCES	Collector-Emitter Voltage	1700	V
VGES	Gate-Emitter Voltage	±20	V
IC	Collector Current TC=25oC TC= 100oC	1069 600	A
ICM	Pulsed Collector Current tp=1ms	1200	A
PD	Maximum Power Dissipation T =175oC	4166	W

Diode

Symbol	Description	Value	Unit
VRRM	Repetitive Peak Reverse Voltage	1700	V
IF	Diode Continuous Forward Current	600	A
IFM	Diode Maximum Forward Current tp=1ms	1200	A

Module

Symbol	Description	Value	Unit
Tjmax	Maximum Junction Temperature	175	oC
Tjop	Operating Junction Temperature	-40 to +150	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	4000	V

IGBT Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
		IC=600A,VGE=15V, Tj=25oC		1.85	2.2
		IC=600A,VGE=15V, Tj=25oC		1.85	2.2
VCE(sat)	Collector to Emitter	IC=600A,VGE=15V, Tj=125oC		2.25		V
	Saturation Voltage	IC=600A,VGE=15V, Tj=150oC		2.35
VGE(th)	Gate-Emitter Threshold Voltage	IC= 12.0mA,VCE=VGE, Tj=25oC	5.6	6.2	6.8	V
ICES	Collector Cut-Off	VCE=VCES,VGE=0V,			5	mA
ICES	Current	Tj=25oC			5	mA
IGES	Gate-Emitter Leakage Current	VGE=VGES,VCE=0V, Tj=25oC			400	nA
RGint	Internal Gate Resistance			1.3		Ω
Cies	Input Capacitance	VCE=25V,f=1MHz,		72.3		nF
Cres	Reverse Transfer	VGE=0V		1.75		nF
Cres	Capacitance			1.75		nF
QG	Gate Charge	VGE=- 15…+15V		5.66		μC
td(on)	Turn-On Delay Time			170		ns
tr	Rise Time			67		ns
td(off)	Turn-Off Delay Time	VCC=900V,IC=600A, RG= 1.0Ω,VGE=±15V, Tj=25oC		527		ns
tf	Fall Time			138		ns
Eon	Turn-On Switching			154		mJ
Eon	Loss			154		mJ
Eoff	Turn-Off Switching			132		mJ
Eoff	Loss			132		mJ
td(on)	Turn-On Delay Time			168		ns
tr	Rise Time			80		ns
td(off)	Turn-Off Delay Time	VCC=900V,IC=600A, RG= 1.0Ω,VGE=±15V, Tj= 125oC		619		ns
tf	Fall Time			196		ns
Eon	Turn-On Switching			236		mJ
Eon	Loss			236		mJ
Eoff	Turn-Off Switching			198		mJ
Eoff	Loss			198		mJ
td(on)	Turn-On Delay Time			192		ns
tr	Rise Time			80		ns
td(off)	Turn-Off Delay Time	VCC=900V,IC=600A, RG= 1.0Ω,VGE=±15V, Tj= 150oC		640		ns
tf	Fall Time			216		ns
Eon	Turn-On Switching			259		mJ
Eon	Loss			259		mJ
Eoff	Turn-Off Switching			215		mJ
Eoff	Loss			215		mJ
		tP≤10μs,VGE=15V,
ISC	SC Data	Tj=150oC,VCC= 1000V, VCEM≤1700V		2400		A

Package Dimensions

YZPST-GD600HFX170C6S(7)

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YANGZHOU POSITIONING TECH CO., LTD.

 Audited supplier

7 year

Address: Yangzhou, China

Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module, Power Diode, Silicon Transistor , Bridge Rectifier

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