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TRIAC BTA208S-800B TO220

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Product details

BTA208  TRIACS

YZPST-BTA208S-800B

DESRCRIPTION:
Due to separation glass passivation, these devices have good
performance at dv/dt and reliability. The Triac series is suitable for general purpose AC switching. They can be used as an On-Off
function in the applications such as static relays, heating regulation, or for phase control operation in light dimmers, motor speed
controllers.

TO-220


MAIN FEATURES

Symbol Value Unit
IT(RMS) 8 A
VDRM/VRRM 600/800 V
IGT 10 mA

ABSOLUTE MAX I MUM RATINGS

Symbol PARAMETER Value Unit
IT(RMS) RMS on-state current(full sine wave) TO-220.Non-Ins TC102℃ 8 A
Non repetitive surge peak on-state current t=20ms 65
ITSM (full sine wave, Tj=25℃) t= 16.7ms 71 A
I2t I2t Value for fusing t= 10ms 21 A2S
di/dt Repetitive rate of rise of on-state Current after triggering ITM  = 12 A; IG = 0.2 A dIG/dt = 0.2 A/us 100 A/μs
IGM Peak gate current 2 A
VGM Peak gate voltage 5 W
PGM Peak gate power 5 W
PG(AV) Average gate power over any 20 ms period 0.5 W
Tstg Storage junction temperature range -40 to +150
Tj Operating junction temperature range 125

ELECTRICAL CHARACTERISTICS (Tj = 25。C, unless otherwise specified)

STATIC CHARACTERISTICS

Symbol Value
Parameter Test Condition Quadrant MIN TYPE MAX Unit
IGT Gate trigger current VD= 12V, IT=0. 1A Ⅰ-Ⅱ-Ⅲ - - 10 mA
VD= 12V, IT=0. 1A - 0.7 1.5
VGT Gate trigger voltage VD=400V, IT=0. 1A,Tj= 125°C 0.25 0.4 - V
VT On-state voltage IT= 10A - 1.3 1.65 V
IH Holding current VD= 12V, IGT=0. 1A Ⅰ-Ⅱ-Ⅲ - - 60 mA
Ⅰ-Ⅲ - - 60 mA
IL Latching current VD= 12V, IGT=0. 1A - - 90 mA
ID Off-state leakage current VD = VDRM(max); Tj= 125 ˚C - 0.1 0.5 mA


DYNAMIC CHARACTERISTICS

Symbol Value
Parameter Test Condition MIN TYPE Unit
dVD/dt Critical rate of rise of off- state voltage VDM  = 67% VDRM(max); Tj = 125 ˚C 1000 4000 V/us
exponential waveform; gate open circuit
dIcom/dt Critical rate of change of commutating current VDM  = 400 V; Tj = 125 ˚C; IT(RMS)  = 8 A; without snubber; gate open circuit 14 A/ms
T Gate controlled turn-on time ITM  = 12 A; V= VDRM(max) ; IG  = 0. 1 A; dIG/dt = 5 A/µs 2 us
tgt

PACKAGE MECHANICAL DATA

TO-220


YZPST-BTA208-600D

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7 year
Address: Yangzhou, China


Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module, Power Diode, Silicon Transistor, Bridge Rectifier

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