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P/N:YZPST-P150HFN120AT1R6
62mm module with fast Trench/Fieldstop IGBT and Fast Recovery Diode
Features
■ Low Switching Losses
■ LoW VcEsal
■ Low VcE(sat with Positive Temperature Coefficient
Applications
■ Motor Drives
UPS Systems
■ High Power Inverter
Equivalent Circuit Schematic
IGBT -Inverter
Maximum Rated Values
|
Symbol |
Description |
Conditions |
Values |
Unit |
|
VcEs |
Collector-Emitter Voltage |
Tv=25℃ |
1200 |
V |
|
VGEs |
Gate-Emitter Peak Voltage |
Ty=25℃ |
±20 |
V |
|
lc |
Continuous DC Collector Current |
Tc=100℃ |
150 |
A |
|
CRM |
Repetitive Peak Collector Current |
tp=1ms |
300 |
A |
|
Ptot |
Total Power Dissipation |
Tc=25℃,Tyjmax=175℃ |
1500 |
W |
Symbol
Values
Description
Conditions
Min.
Typ.
Max.
Unit
VcE(sat
Collector-Emitter Saturation Voltage
VcE=15V,Ic=150A,Tv=25℃
2.2
V
Vge=15V,Ic=150A,Tv=125℃
2.5
V
VgE(th
Gate Threshold Voltage
VgE=VcE,Ic=3.8mA
5
5.8
6.5
V
IcEs
Collector-Emitter Cut-Off Current
VcE=1200V,VgE=0V
mA
GES
Gate-Emitter Leakage Current
VcE=20V,VcE=0V
600
nA
RGint
Internal Gate Resistor
Ty=25℃
3.8
Ω
Cies
Input Capacitance
11.5
nF
Coes
Output Capacitance
Vce=25V,Vce=0V,f=1MHz
1
nF
Cres
Reverse Transfer Capacitance
0.4
nF
tt(on)
Turn-on Delay Time
139
ns
Vcc=600V
t
Turn-on Rise Time
VoE=±15V
37
nS
d(a)
Turn-off Delay Time
Ic=150A
192
nS
t
Turn-off Fall Time
Rg=2.0g
128
nS
Eon
Turn-on Switching Loss
Inductive Load
7.9
-=
mJ
E₀ff
Turn-off Switching Loss
Ty=25℃
8.4
mJ
Isc
Short Circuit Data
VcE≤15V,Vcc=600V
518
A
tp≤10μs,Tv=25℃
Thermal Resistance,Junction to Case
Per IGBT
—--
0.1
—--
K/W
Twop
Virtual Junction Temperature
Under Switching
-40
150
℃
Diode -Inverter
Maximum Rated Values
|
Symbol |
Description |
Conditions |
Values |
Unit |
|
VRRM |
Repetitive Peak Reverse Voltage |
Tv=25℃ |
1200 |
V |
|
lF |
Continuous DC Forward Current |
|
150 |
A |
|
lFRM |
Repetitive Peak Collector Current |
tp=1ms |
300 |
A |
Characteristic Values
| Symbol | Values | |||||
| Description | Conditions | Min. | Typ | Max. | Unit | |
| Forward Voltage | lr=150A,Vse=0V,Tv=25℃ | 2.5 | V | |||
| VF | l=150A,Vge=0V,Tv=125℃ | 1.9 | —-- | V | ||
| RM | Peak Reverse Recovery Current | —-- | 42 | A | ||
| Qr | Recovered Charge | l=150A,Vg=600V,Vge=-15V | 3.1 | uC | ||
| Erec | Reverse Recovery Energy | Ty=25℃ | 1.1 | mJ | ||
| Tuop | Virtual Junction Temperature | Under Switching | -40 | 150 | ℃ | |
Package Outlines(mm)
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode,
Silicon Transistor,
Bridge Rectifier
