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YZPST-P150HFN120AT1R6

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Product details

P/N:YZPST-P150HFN120AT1R6

62mm module with fast Trench/Fieldstop IGBT and Fast Recovery Diode

Features

■   Low  Switching   Losses

■    LoW    VcEsal

■  Low  VcE(sat  with  Positive  Temperature  Coefficient

Applications

■  Motor  Drives

    UPS   Systems

■  High  Power  Inverter

Equivalent Circuit Schematic

P150HFN120AT1R6

IGBT -Inverter

Maximum   Rated   Values

 

Symbol

Description

Conditions

Values

Unit

VcEs

Collector-Emitter Voltage

Tv=25℃

1200

V

VGEs

Gate-Emitter Peak Voltage

Ty=25℃

±20

V

lc

Continuous DC Collector Current

Tc=100℃

150

A

CRM

Repetitive Peak Collector Current

tp=1ms

300

A

Ptot

Total Power Dissipation

Tc=25℃,Tyjmax=175℃

1500

W

Characteristic Values




Symbol Values
Description Conditions Min. Typ. Max. Unit
VcE(sat Collector-Emitter Saturation Voltage VcE=15V,Ic=150A,Tv=25℃ 2.2 V
Vge=15V,Ic=150A,Tv=125℃ 2.5 V
VgE(th Gate Threshold Voltage VgE=VcE,Ic=3.8mA 5 5.8 6.5 V
IcEs Collector-Emitter Cut-Off Current VcE=1200V,VgE=0V mA
GES Gate-Emitter Leakage Current VcE=20V,VcE=0V 600 nA
RGint Internal Gate Resistor Ty=25℃ 3.8 Ω
Cies Input Capacitance 11.5 nF
Coes Output Capacitance Vce=25V,Vce=0V,f=1MHz 1 nF
Cres Reverse Transfer Capacitance 0.4 nF
tt(on) Turn-on Delay Time 139 ns
Vcc=600V
t Turn-on Rise Time VoE=±15V 37 nS
d(a) Turn-off Delay Time Ic=150A 192 nS
t Turn-off Fall Time Rg=2.0g 128 nS
Eon Turn-on Switching Loss Inductive Load 7.9 -= mJ
Eff Turn-off Switching Loss Ty=25℃ 8.4 mJ
Isc Short Circuit Data VcE≤15V,Vcc=600V 518 A
tp≤10μs,Tv=25℃
Thermal Resistance,Junction to Case Per IGBT —-- 0.1 —-- K/W
Twop Virtual Junction Temperature Under Switching -40 150

Diode   -Inverter

Maximum Rated Values

Symbol

Description

Conditions

Values

Unit

VRRM

Repetitive Peak Reverse Voltage

Tv=25℃

1200

V

lF

Continuous DC Forward Current

 

150

A

lFRM

Repetitive Peak Collector Current

tp=1ms

300

A

Characteristic Values

Symbol Values
Description Conditions Min. Typ Max. Unit
Forward Voltage lr=150A,Vse=0V,Tv=25℃ 2.5 V
VF l=150A,Vge=0V,Tv=125℃ 1.9 —-- V
RM Peak Reverse Recovery Current —-- 42 A
Qr Recovered Charge l=150A,Vg=600V,Vge=-15V 3.1 uC
Erec Reverse Recovery Energy Ty=25℃ 1.1 mJ
Tuop Virtual Junction Temperature Under Switching -40 150

Package        Outlines(mm)

YZPST-P150HFN120AT1R6


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Audited supplier
7 year
Address: Yangzhou, China


Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module, Power Diode, Silicon Transistor, Bridge Rectifier

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The information of 2bvideo.com limited shown above is provided by the user or collected on the network. Video 2B does not guarantee the authenticity,accuracy and legitimacy of 2bvideo.com limited information. Video 2B does not involve legal relationships and disputes between users arising from transactions other than secured transactions on this website. Disputes shall be settled by you through negotiation. If you are the person in charge or relevant employee of this enterprise, if you find that the enterprise information is incorrect or want to manage thiscompany, please contact us jacklee1558@gmail.com, after you claim the enterprise, you can obtain management permission, publish supplyand demand information, bring consulting orders, and remove page advertisements.
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