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The heatsink can be reduced, compared to traditional triacs, according to the high performance at given junction temperatures
MAIN FEATURES
|
Symbol |
Value |
Unit |
|
IT(RMS) |
16 |
A |
|
VDRM VRRM |
600 |
V |
|
IGT |
50 |
mA |
ABSOLUTE MAXIMUM RATINGS
|
Parameter |
Symbol |
Value |
Unit |
|
Storage junction temperature range |
Tstg |
-40 ~150 |
℃ |
|
Operating junction temperature range |
Tj |
-40~125 |
℃ |
|
Repetitive peak off-state voltage (T =25℃) |
VDRM |
600 |
V |
|
Repetitive peak reverse voltage (T =25℃) |
VRRM |
600 |
V |
|
RMS on-state current |
IT(RMS) |
16 |
A |
|
Non repetitive surge peak on-state current (full cycle, F=50Hz) |
ITSM |
160 |
A |
|
I2t value for fusing (tp=10ms) |
I2t |
169 |
A2S |
|
Critical rate of rise of on-state current (I =2×IGT) |
dI/dt |
50 |
A/μS |
|
Peak gate current |
IGM |
4 |
A |
|
Average gate power dissipation |
PG(AV) |
1 |
W |
ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified)
| Symbol | Value | |||||
| Test Condition | Quadrant | T1635 | T1650 | Unit | ||
| IGT | Ⅰ Ⅱ Ⅲ | MAX. | 35 | 50 | mA | |
| VGT | V =12V R =33Ω | Ⅰ Ⅱ Ⅲ | MAX. | 1.3 | V | |
| VGD | VD=VDRM Tj=125℃ R=3.3KΩ | Ⅰ Ⅱ Ⅲ | MIN. | 0.2 | V | |
| IL | IG=1.2IGT | ⅠⅡ Ⅲ | MAX. | 80 | 110 | mA |
| IH | IT=100mA | MAX. | 50 | 75 | mA | |
| dV/dt | VD=2/3VDRM Gate Open Tj=125℃ | MIN. | 1000 | 1500 | V/μs | |
STATIC CHARACTERISTICS
| Symbol | Parameter | Value | Unit | |
| VTM | ITM =23A tp=380μs | Tj =25℃ | 1.55 | V |
| IDRM | VD=VDRM VR=VRRM | Tj =25℃ | 5 | μA |
| IRRM | Tj =125℃ | 5.5 | mA | |
Thermal Resistances
| Symbol | Parameter | Value | Unit |
| Rth(j-a) | junction to ambient | 60 | |
| Rth(j-c) | Junction to case(AC) | 2.1 | ℃/W |
TO-220M2 Package Mechanical Data
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module ,
Power Diode,
Silicon Transistor,
Bridge Rectifier
