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Silicon N-Channel Power MOSFET 7N90A0 TO263

12 month ago
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Product details
Silicon N-Channel Power MOSFET
P/N: YZPST-7N90A0
General Description:
YZPST-7N90A0 the silicon N-channel Enhanced VDMOSFETS, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-263, which accords with the RoHS standard.
Features:
Fast Switching
Low Gate Charge and Rdson
Low Reverse transfer capacitances

100% Single Pulse avalanche energy Test

YZPST-7N90A0 TO-263

Applications:
Power switch circuit of adaptor and charger.
Absolute (Tc= 25℃ unless otherwise specified):
Symbol Parameter Rating Units
V DSS Drain-to- Source Voltage 900 V
ID Continuous Drain Current 7 A
Continuous Drain Current TC   = 100 °C 5 A
a1 Pulsed Drain Current 28 A
IDM
VGS Gate-to-Source Voltage ±30 V
a2 Single Pulse Avalanche Energy 700 mJ
EAS
a1 Avalanche Energy , Repetitive 60 mJ
EAR
a1 Avalanche Current 2.4 A
IAR
dv/dt Peak Diode Recovery dv/dt 5 V/ns
a3
PD Power Dissipation 160 W
Derating Factor above 25 °C 1.28 W/
TJ Tstg Operating       Junction       and       Storage 150  55 to 150
Temperature Range
TL MaximumTemperature for Soldering 300

Electrical Characteristics(Tc= 25℃ unless otherwise specified ):

OFF Characteristics
Symbol Parameter Test Conditions Rating Units
Min. Typ. Max.
V DSS Drain      to      Source      Breakdown VGS =0V, I D =250µA 900 -- -- V
Voltage
ΔBVDSS/ ΔTJ Bvdss Temperature Coefficient ID=250uA, Reference25℃ -- 0.8 -- V/
VDS  = 900V, VGS = 0V, -- -- 1
IDSS Drain to Source Leakage Current Ta  = 25 µ A
VDS  =720V, VGS = 0V, -- -- 250
Ta  = 125
IGSS( F) Gate to Source Forward Leakage VGS  = +30V -- -- 10 µ A
IGSS(R ) Gate to Source Reverse Leakage VGS  =- 30V -- -- -10 µ A
ON Characteristics
Symbol Parameter Test Conditions Rating Units
Min. Typ. Max.
RDS(ON) Drain-to-Source On- Resistance VGS =10V, I D =3.0A -- 1.4 1.8 Ω
VGS(TH ) Gate Threshold Voltage VDS  = VGS,  I D  = 250µA 2.5 -- 4.5 V
Pulse width tp 380µs,δ≤2%

Dynamic Characteristics
Symbol Parameter Test Conditions Rating Units
Min. Typ. Max.
gfs Forward Transconductance VDS = 15V, I D  =3A -- 8 -- S
Ciss Input Capacitance -- 1460 --
Coss Output Capacitance VGS  = 0V VDS  = 25V -- 130 -- pF
Crss Reverse Transfer Capacitance f = 1.0MHz -- 23 --
Resistive Switching Characteristics
Symbol Parameter Test Conditions Rating Units
Min. Typ. Max.
td(ON) Turn-on Delay Time -- 22 --
tr Rise Time I D  =7.0A     V DD   = 450V -- 45 --
td(OFF ) Turn-Off Delay Time VGS  =  10V      RG  = 9.1Ω -- 33 -- ns
tf Fall Time -- 37 --
Qg Total Gate Charge -- 37 --
Qgs Gate to Source Charge I D  =7 . 0A     V DD  =450V -- 8 -- nC
Qgd Gate to Drain (“ Miller )Charge VGS  = 10V -- 14 --

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Address: Yangzhou, China


Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module, Power Diode, Silicon Transistor, Bridge Rectifier

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