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Standard 1A Triacs P/N:YZPST-Z0103MN0
Table 1. Absolute maximum ratings
|
Symbol |
Parameter |
Value |
Unit |
||
|
IT(RMS) |
On-state rms current (full sine wave) |
SOT-223 |
T tab = 90 °C |
1 |
A |
|
TO-92 |
TL = 50 °C |
||||
|
SMBflat-3L |
T tab = 107 °C |
||||
|
ITSM |
Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) |
F = 50 Hz |
t = 20 ms |
8 |
A |
|
F = 60 Hz |
t = 16.7 ms |
8.5 |
|||
|
I²t |
I²t Value for fusing |
tp = 10 ms |
0.35 |
² A s |
|
|
dI/dt |
Critical rate of rise of on-state current IG = 2 x I GT , tr ≤ 100 ns |
F = 120 Hz |
Tj = 125 °C |
20 |
A/µs |
|
IGM |
Peak gate current |
tp = 20 µs |
Tj = 125 °C |
1 |
A |
|
PG(AV) |
Average gate power dissipation |
Tj = 125 °C |
1 |
W |
|
|
Tstg Tj |
Storage junction temperature range Operating junction temperature range |
- 40 to + 150 - 40 to + 125 |
°C |
||
Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
|
Symbol |
Test conditions |
Quadrant |
|
Z01 |
Unit |
|||
|
03 |
07 |
09 |
10 |
|||||
|
I GT (1) |
VD = 12 V, RL = 30 Ω |
I - II - III |
MAX. |
3 |
5 |
10 |
25 |
mA |
|
IV |
5 |
7 |
10 |
25 |
||||
|
VGT |
ALL |
MAX. |
1.3 |
V |
||||
|
VGD |
VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C |
ALL |
MIN. |
0.2 |
V |
|||
|
IH (2) |
IT = 50 mA |
MAX. |
7 |
10 |
10 |
25 |
mA |
|
|
IL |
IG = 1.2 I GT |
I - III - IV |
MAX. |
7 |
10 |
15 |
25 |
mA |
|
II |
15 |
20 |
25 |
50 |
||||
|
dV/dt (2) |
VD = 67% V DRM gate open Tj = 110 °C |
MIN. |
10 |
20 |
50 |
100 |
V/µs |
|
|
(dV/dt)c (2) |
(dI/dt)c = 0.44 A/ms, Tj = 110 °C |
MIN. |
0.5 |
1 |
2 |
5 |
V/µs |
|
1. Minimum I GT is guaranteed at 5% of IGT max.
2. For both polarities of A2 referenced to A1.
Table 3. Static characteristics
| Symbol | Test conditions | Value | Unit | ||
| VTM(1) | ITM = 1.4 A, tp = 380 µs | Tj = 25 °C | MAX. | 1.6 | V |
| V to (1) | Threshold voltage | Tj = 125 °C | MAX. | 0.95 | V |
| Rd (1) | Dynamic resistance | Tj = 125 °C | MAX. | 400 | mΩ |
| I DRM | V DRM = VRRM | Tj = 25 °C | MAX. | 5 | µA |
| IRRM | Tj = 125 °C | 0.5 | mA | ||
1. For both polarities of A2 referenced to A1.
Table 4. Thermal resistances
| Symbol | Parameter | Value | Unit | |||
| Rth(j-t) | Junction to tab (AC) | SOT-223 | 25 | |||
| Rth(j-t) | Junction to tab (AC) | SMBflat-3L | 14 | |||
| Rth(j-I) | Junction to lead (AC) | TO-92 | 60 | |||
| S(1) = 5 cm² | SOT-223 | MAX. | 60 | °C/W | ||
| Rth(j-a) | Junction to ambient | SMBflat-3L | 75 | |||
| TO-92 | 150 | |||||
1. S = copper surface under tab.
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Main Product:
Semiconductor Triac,
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Semiconductor Module,
Power Diode,
Silicon Transistor ,
Bridge Rectifier
