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Rate value (unless special shows , Tj =25℃)
|
Description |
symbol |
value |
unit |
|
Repetitive paek off-state voltage (Tj = -40 ~ 125℃ ) Half sine wave 50 Hz, gate open -6075B |
V DRM VRRM |
600 600 |
V |
|
Nominal RMS on-state current Full sine wave 5 0 Hz |
IT(RMS) |
4 |
A |
|
Non-repetitive peak surge current (junction temperature Tj = 2 5℃ ) One cycle 5 0 Hz |
ITSM |
30 |
A |
|
Fuse current (t = 8.3 ms) |
2 I t |
3.7 |
A2s |
|
Gate average power (TC = 8 0℃ , t = 8.3 ms) |
PG(AV) |
0.5 |
W |
|
Gate peak current (t ≤ 2.0 μ s) |
IGM |
1 |
A |
|
Work junction temperature |
TJ |
-40~ 110 |
℃ |
|
Storage temperature |
Tstg |
-40~150 |
℃ |
Thermal characteristics
|
Description |
Symbol |
Max |
Unit |
|
Thermal resistance ( junction to case) |
Rj C |
3.5 |
℃/W |
|
Thermal resistance ( junction to ambient ) |
Rj A |
75 |
℃//W |
Electic characteristics (unless special shows Tj =25℃)
|
Description |
Symbol |
Min |
Type |
Max |
Unit |
|
Repetitive paek off-state current (VD = Rated VDRM ,VR RM gate open ) Tj = 2 5 ℃ Tj = 1 1 0 ℃ |
IDRM, IRRM |
- |
- |
10 2 |
uA mA |
|
Peak on-state Voltage (IT = 6 A) |
VT |
|
- |
2 |
V |
|
Gate trigger current (VD = 1 2 V, RL = 3 0 Ω ) MT 2 ( +) , G( +) MT2 (+), G(- ) MT2 (- ), G(- ) MT2 (- ), G( + ) - - - B |
IGT |
- - - |
- - - - |
3 3 3 5 |
mA |
|
Gate trigger voltage (VD = 1 2 V, RL = 3 0 Ω ) All se rises |
VGT |
- |
1.4 |
2.5 |
V |
|
Gate non-trigger voltage (VD = 1 2 V, RL = 3 0 Ω , Tj = 1 1 0 校 ) All se rises |
VGD |
0.2 |
- |
- |
V |
|
Hold current (Candution current IT= 100mA) Tj = 2 5 ℃ Tj = 1 1 0 ℃ |
IH |
- - |
- - |
15 30 |
mA |
|
Critical Rate-of-Rise of Off-state Voltage VDM=1/2VDRM, Tj=110 °C RGK=1KΩ |
dv/dt |
5 |
- |
|
V/uS |
TO-126 package drawing：
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode ,
Silicon Transistor,
Bridge Rectifier
