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SiC MOSFET M1A045170L

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Product details
P/N:YZPST-M1A045170L
Silicon Carbide Power MOSFET
( N Channel Enhancement Mode)
Features
High Speed Switching with Low Capacitances
High Blocking Voltage with Low On-Resistance
Easy to Parallel and Simple to Drive
Resistant to Latch-UP
Halogen Free, RoHS Compliant
Benefits
Higher System Efficiency
Reduced Cooling Requirements
Increased Power Density
Increased System Switching Frequency
 
Applications
Solar Inverters
Switch Mode Power Supplies
High Voltage DC/DC Converters
Motor Drive
M1A045170L TO-247-4

Part Number

Package

Marking

M1A045170L

TO-247-4L

M1A045170L


Maximum Ratings (Tc = 25°C unless otherwise specified)


Symbol Parameter Value Unit Test Conditions Note
VDSmax Drain-Source Voltage 1700 V VGS  = 0 V, ID  = 100 μA  
VGSmax Gate-Source Voltage -0.4 V Absolute maximum values  
VGSop Gate-Source Voltage -0.25 V Recommended operational values  
ID Continuous Drain Current 85 A VGS  = 20 V, TC = 25˚C  
55 VGS  = 20 V, TC = 100˚C
ID(pluse) Pulsed Drain Current 160 A Pulse width tP  limited by Tjmax  
PD Power Dissipation 520 W TC =25˚C, TJ =150℃  
TJ , Tstg Operating Junction and Storage Temperature -55 to 175    
TL Solder Temperature 260 1.6mm (0.063 ”) from case for 10s  
Md Mounting Torque 1 Nn M3 or 6-32 screw  
   
8.8 lbf-in
Electrical Characteristics (Tc = 25°C unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit   Test Conditions Note
V(BR)DSS Drain Drain-Source 1700   - V   VGS = 0 V, ID = 100 μA  
 
Breakdown Voltage
    2 2.6 4 V   VDS = VGS, ID = 18mA  
   
VGS(th) Gate threshold Voltage   1.9   V   VDS = VGS, ID = 18mA, TJ =150°C  
IDSS Zero Gate Voltage Drain Current   2 100 μA   VDS = 1700 V, VGS = 0 V  
IGSS Gate Source Leakage     2 uA   VGS = 20 V, VDS = 0 V  
 
Current
  Drain-Source   34 60 mΩ   VGS = 20 V, ID = 50 A  
   
RDSON On-State Resistance   66     VGS = 20 V, ID = 50A, TJ =150°C  
gfs Transconductance   16       VGS = 20 V, ID = 50A  
 
  19   S   VGS = 20 V, ID = 50A, TJ =150°C  
C Input Capacitance   4078          
oss Output Capacitance   167        
rss Reverse Capacitance   39   pF   VDS =1000V,TJ=25°C,f=1MHz
Eoss Coss Stored Energy   203   μJ      
Eon Turn on Switching Energy   1.9       VDS = 1200 V, VGS = -5/20 V, ID = 50A, Rg(ext) = 2.5Ω,  
     
Eoff Turn off Switching Energy   0.3   mJ   TJ=150°C
tdon Turn on delay time   21        
     
tr Rise time   46       VDS = 1200 V, VGS = -5/20 V, ID = 50A, Rg(ext)= 2.5Ω
tdoff Turn off delay time   50        
tf Fall time   19   ns    
Rgint Internal Gate Resistance   2.6       VAC =25mV, f=1MHz  
Qgs Gate to Source Charge   44       VDS = 1200 V, VGS = -5/20 V, ID = 50A  
Qgd Gate to Drain Charge   84    
Qg Total Gate Charge   248   nC

Electrical Characteristics (Tc = 25°C unless otherwise specified)

Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
VSD Diode Forward Voltage   6.1 - V VGS = -5 V, ISD = 25 A  
  5.2   VGS = -5 V, ISD = 25 A,TJ =150°C  
I Continuous Diode Forward Current     75 A VGS = -5V, Tc=25°C  
S
trr Reverse Recovery Time   126   ns VR= 1200 V, VGS = -5V, ID = 50A, di/dt=1400A/μS,T=150°C  
Qrr Reverse Recovery Charge   1360   nC
Irrm Peak Reverse Recovery Current   19   A
package TO-247-4

 

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Main Product: Semiconductor Triac , Semiconductor Thyristor, Semiconductor Module, Power Diode, Silicon Transistor, Bridge Rectifier

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