BRIDGE RECTIFIER
YZPST-MB05S-MB10S
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter |
Symbol |
MB05S |
MB1S |
MB2S |
MB4S |
MB6S |
MB8S |
MB10S |
Unit |
Repetitive peak reverse voltage |
VRRM |
50 |
100 |
200 |
400 |
600 |
800 |
1000 |
V |
DC Reverse Voltage |
VR |
50 |
100 |
200 |
400 |
600 |
800 |
1000 |
V |
RMS Reverse Voltage |
V RMS |
35 |
70 |
140 |
280 |
420 |
560 |
700 |
V |
Mean rectifying current |
IF |
0.5/0.8 |
A |
||||||
Non-Repetitive Peak Forward Surge Current @ t = 8.3 ms |
IFSM |
30 |
A |
||||||
Thermal Resistance From Junction To Ambient |
RθJA |
90 |
°C/W |
||||||
Junction Temperature |
TJ |
-55 ~+150 |
°C |
||||||
Storage Temperature |
TSTG |
-55 ~+150 |
°C |
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter |
Symbol |
Min |
Max |
Unit |
Conditions |
Forward voltage |
VF |
|
1.0 |
V |
IF=0.5A |
Forward voltage |
VF |
|
1.1 |
V |
IF=0.8A |
Reverse current T=25°C |
IR |
|
5 |
uA |
VR=VRRM |
Reverse current T= 125°C |
IR |
|
40 |
uA |
VR=VRRM |
Junction capacitance |
CJ |
|
13 |
pF |
V=4VDC ,f=1MH |
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor ,
Semiconductor Module,
Power Diode,
Silicon Transistor,
Bridge Rectifier