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BT131 Series 1A Triacs SOT-223
MAIN FEATURES:
|
symbol |
value |
unit |
|
IT(RMS) |
1 |
A |
|
VDRM/VRRM |
600/800 |
V |
|
VTM |
≤1.5 |
V |
ABSOLUTE MAXIMUM RATINGS:
|
Parameter |
Symbol |
Value |
Unit |
|
|
Storage junction temperature range |
Tstg |
-40~150 |
℃ |
|
|
Operating junction temperature range |
Tj |
-40~125 |
℃ |
|
|
Repetitive peak off-state voltage (Tj=25℃) |
VDRM |
600/800 |
V |
|
|
Repetitive peak reverse voltage (Tj=25℃) |
VRRM |
600/800 |
V |
|
|
RMS on-state current |
IT(RMS) |
1 |
A |
|
|
Non repetitive surge peak on-state current (full cycle, F=50Hz) |
ITSM |
16 |
A |
|
|
I2t value for fusing (tp=10ms) |
I2t |
1.28 |
A2s |
|
|
Critical rate of rise of on-state current (IG=2×IGT) |
dI/dt |
Ⅰ-Ⅱ-Ⅲ |
50 |
A/μs |
|
Ⅳ |
10 |
|||
|
Peak gate current |
IGM |
2 |
A |
|
|
Average gate power dissipation |
PG(AV) |
0.5 |
W |
|
|
Peak gate power |
PGM |
5 |
W |
|
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
|
Parameter |
Test Condition |
Quadrant |
|
Value |
Unit |
|
|
T |
D |
|||||
|
IGT |
VD=12V, RL=33Ω |
Ⅰ-Ⅱ-Ⅲ |
MAX |
3 |
5 |
mA |
|
Ⅳ |
5 |
10 |
|
|||
|
VGT |
Ⅰ-Ⅱ-Ⅲ-Ⅳ |
1.3 |
V |
|||
|
VGD |
VD=VDRM |
Ⅰ-Ⅱ-Ⅲ-Ⅳ |
MIN |
0.2 |
V |
|
|
IH |
IT=100mA |
MAX |
5 |
7 |
mA |
|
|
IL |
IG=1.2IGT |
Ⅰ-Ⅲ-Ⅳ |
MAX |
5 |
5 |
mA |
|
Ⅱ |
10 |
20 |
||||
|
dV/dt |
VD=0.66×VDRM Tj=125℃ Gate open |
MIN |
20 |
50 |
V/µs |
|
|
Symbol |
Test Condition |
Value |
Unit |
||
|
VTM |
ITM=1.4A tp=380μs |
Tj=25℃ |
MAX |
1.5 |
V |
|
IDRM IRRM |
VDRM= VRRM |
Tj=25℃ |
MAX |
5 |
µA |
|
Tj=125℃ |
0.5 |
mA |
|||
THERMAL RESISTANCES
|
Symbol |
Test Condition |
Value |
Unit |
|
|
Rth(j-c) |
junction to case(AC) |
TO-92 |
60 |
℃/W |
|
SOT-89/SOT-223 SOT-223-2L |
31 |
℃/W |
||
PACKAGE MECHANICAL DATA
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module ,
Power Diode,
Silicon Transistor,
Bridge Rectifier
