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TRIAC Z0109MN 1-3MA SOT223-3L

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Product details
P/N:YZPST-Z0103MA; Z0103NA; Z0107MA; Z0107NA; Z0109MA; Z0109NA Z0103MN; Z0103NN; Z0107MN; Z0107NN; Z0109MN; Z0109NN
1. Product profile
 
1.1 Description
Passivated triacs in conventional and surface mounting packages. Intended for use in applications requiring high bidirectional transient and blocking voltage capability.
Available in a range of gate current sensitivities for optimum performance.
Product availability:
Z0103MA; Z0103NA; Z0107MA; Z0107NA; Z0109MA; Z0109NA in SOT54B Z0103MN; Z0103NN; Z0107MN; Z0107NN; Z0109MN; Z0109NN in SOT223.
 
1.2 Features
Blocking voltage to 800 V (NA and NN 1 A on-state RMS current. types)
 
1.3 Applications
Home appliances Small motor control
Fan controllers Small loads in industrial process control.

Pinning information

Table 1:      Pinning - SOT54B (TO-92), SOT223, simplified outline and symbol

1          terminal 2 (T2) SOT54B (TO-92)
2          gate (G)
3          terminal 1 (T1)
1          terminal 1 (T1)         SOT223
 
2 terminal 2 (T2)
3 gate (G)
 
4          terminal 2 (T2)

SOT54B SOT223
3.1 Ordering options
Table 2: Ordering information
Part Number Voltage (VDRM) Gate Sensitivity (IGT) Package
Z0103MA 600 V 3 mA SOT54B (TO-92)
Z0103NA 800 V 3 mA SOT54B (TO-92)
Z0107MA 600 V 5 mA SOT54B (TO-92)
Z0107NA 800 V 5 mA SOT54B (TO-92)
Z0109MA 600 V 10 mA SOT54B (TO-92)
Z0109NA 800 V 10 mA SOT54B (TO-92)
Z0103MN 600 V 3 mA SOT223
Z0103NN 800 V 3 mA SOT223
Z0107MN 600 V 5 mA SOT223
Z0107NN 800 V 5 mA SOT223
Z0109MN 600 V 10 mA SOT223
Z0109NN 800 V 10 mA SOT223
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions
Min
Max Unit
V DRM repetitive peak off-state voltage 25 ° T  125 °C      
Z0103/07/09MA; Z0103/07/09MN - 600 V
Z0103/07/09NA; Z0103/07/09NN - 800 V
VRRM repetitive peak reverse voltage 25 ° T  125 °C      
Z0103/07/09MA; Z0103/07/09MN - 600 V
Z0103/07/09NA; Z0103/07/09NN - 800 V
ITSM non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to surge;      
Figure 2 and Figure 3
t = 20 ms - 8 A
t = 16.7 ms - 8.5 A
IT(RMS) RMS on-state current all conduction angles; Figure 4      
SOT223 Tsp = 90 °C - 1 A
SOT54B (TO-92) T lead = 50 °C - 1 A
I2t I2t for fusing t =  10 ms - 0.35 A2s
dIT/dt rate of rise of on-state current ITM = 1.0 A; IG = 2 x I GT; dIG/dt = 100 mA/µs - 20 A/µs
IGM peak gate current tp = 20 µs - 1 A
PGM peak gate power   - 2 W
PG(AV) average gate power over any 20 ms period - 0.1 W
Tstg storage temperature   40 150 °C
Tj junction temperature   40 125 °C

 Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit
Rth(j-sp) thermal resistance from junction to solder point for SOT223 Figure 5 - - 25 K/W
Rth(j-lead) thermal resistance from junction to lead for SOT54B (TO-92) Figure 5 - - 60 K/W
Rth(j-a) thermal resistance from junction to ambient          
SOT223 minimum footprint; mounted on a PCB - 60 - K/W
SOT54B (TO-92) vertical in free air - 150 - K/W
Characteristics
Tj= 25 ℃ unless otherwise .
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
I GT gate trigger current VD = 12 V; RL = 30 Ω; T2+ G+; T2+ G; T2 G;          
Z0103MA/MN/NA/NN Figure 9 - - 3 mA
Z0107MA/MN/NA/NN   - - 5 mA
Z0109MA/MN/NA/NN   - - 10 mA
Z0103MA/MN/NA/NN VD = 12 V; RL = 30 Ω; T2− G+; Figure 9 - - 5 mA
Z0107MA/MN/NA/NN - - 7 mA
Z0109MA/MN/NA/NN - - 10 mA
IL latching current VD = 12 V; RL = 30 Ω; T2+ G+; T2 G; T2 G+;          
Z0103MA/MN/NA/NN Figure 7 - - 7 mA
Z0107MA/MN/NA/NN   - - 10 mA
Z0109MA/MN/NA/NN   - - 15 mA
Z0103MA/MN/NA/NN VD = 12 V; RL = 30 Ω; T2+ G− ; Figure 7 - - 15 mA
Z0107MA/MN/NA/NN - - 20 mA
Z0109MA/MN/NA/NN - - 25 mA
IH holding current IT = 50 mA; Figure 8        
Z0103MA/MN/NA/NN - - 7 mA
Z0107MA/MN/NA/NN - - 10 mA
Z0109MA/MN/NA/NN - - 10 mA
VT on-state voltage Figure 6 - 1.3 1.6 V
VGT gate trigger voltage VD = 12 V; RL = 30 Ω; Tj  = 25 。C; Figure 11 - - 1.3 V
VD = V DRM; RL = 3.3 kΩ; Tj  = 125 。C; Figure 11 0.2 - - V
ID off-state leakage current VD = V DRM(max); VR = VRRM(max); Tj = 125 C - - 500 μA
Dynamic characteristics
dVD/dt critical rate of rise of VD = 0.67 V DRM(max); Tj  = 110 。C; exponential waveform; gate open; Figure 10        
off-state voltage
Z0103MA/MN/NA/NN 10 - - V/μs
Z0107MA/MN/NA/NN 20 - - V/μs
Z0109MA/MN/NA/NN 50 - - V/μs
dVcom/dt critical rate of change of commutating voltage VD = 400 V; I = 1 A; T = 110 C;        
Z0103MA/MN/NA/NN dIcom/dt = 0.44 A/ms; gate open 0.5 - - V/μs
Z0107MA/MN/NA/NN   1 - - V/μs
Z0109MA/MN/NA/NN   2 - - V/μs

lastic single-ended leaded (through hole) package; 3 leads      

Z0107mn Sot223 3l Jpg

 

 

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Address: Yangzhou, China


Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module, Power Diode, Silicon Transistor, Bridge Rectifier

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