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Press Fit Diode YZPST-CB35L/N P
FEATURES:
a 、Adopt a vacuum solder techniques with one-step soldering Technology. High soldering Lug welds temperature , Good consistency of Max. Forward voltage Drop and Low △VF Dispersion coefficient.
b 、 EPoxy molded packages. Good hermetic closure, and strong resistance against bending , tension , humidity.
c 、 o/J CHIP. Good consistency of Forward and Reverse feature, effective utilization of silicon area , small high temperature leaking currency and good capacity of reverse surge current.
d 、 Apply to each field Automotive Rectifiers Extensively. e 、 Replacement of LUCAS Type diodes.
| TYPE | |||||||
| CHARACTERISTIC | SYM | UNIT | YZPST-CB35MP/N | ||||
| Max. Average Forward current (Tc = 17o℃) | |||||||
| IF (AV) | A | 35 | |||||
| Max. peak, one-cycle forward , non -repetitive surge current | IFSM | 400 | |||||
| A | |||||||
| Max. Forward voltage Drop (IF | VFM | V | 1.1 | ||||
| 100A, Tc = 25℃) | |||||||
| Max. Repetitive Reverse peak voltage | |||||||
| VRRM | V | 25-29 | |||||
| Maximum reverse leakage current (VR = VRRM , TC = 25℃) | IRRM1 | uA | |||||
| 1 | |||||||
| Maximum reverse leakage current (VR = VRRM,TC = 175℃) | IRRM2 | uA | |||||
| 800 | |||||||
| △VF Disperse coefficient | (max-average)/ average | ≤ 15% | |||||
| Max. Thermal Resistance, Junction to case | Rthic | ℃/W | ≤0 . 8 | ||||
| storage temperature Range | Tstg | ℃ | -40200 | ||||
| Junction Temperature | Tjm | ℃ | 200 | ||||
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module ,
Power Diode,
Silicon Transistor,
Bridge Rectifier
