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ABSOLUTE MAXIMUM RATINGS |
|||
|
Parameter |
Symbol |
Value |
Unit |
|
Storage junction temperature range |
|||
|
Operating junction temperature range |
-40~ 125 |
℃ |
|
|
Repetitive peak off-state voltage (T =25℃) |
V |
||
|
Repetitive peak reverse voltage (T =25℃) |
V |
||
|
Non repetitive surge peak Off-state voltage |
V |
||
|
Non repetitive peak reverse voltage |
V |
||
|
RMS on-state current (T = 100℃) |
A |
||
|
Non repetitive surge peak on-state current |
1150 |
A |
|
|
Average on-state current (180° conduction angle) |
IT(AV) |
100 |
A |
|
I2t value for fusing (tp= 10ms) |
I2t |
6600 |
A2 S |
|
Critical rate of rise of on-state curren t(I =2×IGT, tr ≤ 100 ns) |
di/dt |
150 |
A/μS |
|
Peak gate current |
IGM |
5 |
A |
|
Average gate power dissipation |
PG(AV) |
1 |
W |
|
ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified) |
||||
|
Symbol |
Test Condition |
|
Value |
Unit |
|
IGT |
V = 12V R = 140Ω |
MAX. |
40 |
mA |
|
VGT |
MAX. |
1.5 |
V |
|
|
VGD |
VD=VDRM Tj=125℃ R=1KΩ |
MIN. |
0.2 |
V |
|
IL |
IG= 1.2IGT Tj=25℃ |
MAX. |
250 |
mA |
|
IH |
VD=12V Tj=25℃ |
MAX. |
200 |
mA |
|
dV/dt |
VD=2/3VDRM Gate Open Tj=125℃ |
MIN. |
1000 |
V/μs |
TO-247 Package Mechanical Data
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode,
Silicon Transistor,
Bridge Rectifier
