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Triacs sensitive gate
YZPST-T2550H-600T
Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants.
Parameter
Symbol
Typ
Unit
Repetitive peak off-state voltages
VDRM
VRRM
600
V
RMS on-state current
IT(RMS)
25
A
Non-repetitive peak on-state current
ITSM
210
A
Max.Operating Junction temperature
Tj
‐40‐‐+125
℃
Storage Temperature
Tstg
‐40‐‐+150
℃
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ )
|
Parameter |
Symbol |
Test Conditions |
Min |
Typ |
Max |
Unit |
|
|
Repetitive peak off-state voltages |
VDRM VRRM |
|
600 |
— |
— |
V |
|
|
RMS on-state current |
IT(RMS) |
Full sine wave : Tmb≤120℃ |
— |
25 |
— |
A |
|
|
On-state voltage |
VT |
IT=25A |
— |
1.2 |
1.5 |
V |
|
|
Holding current |
IH |
VD = 12 V; IGT = 0.1 A |
— |
— |
50 |
mA |
|
|
Gate trigger current |
T2+G+ |
IGT |
VD = 12 V; IGT = 0.1 A |
— |
14 |
50 |
mA |
|
T2+G- |
— |
28 |
50 |
||||
|
T2-G- |
— |
25 |
50 |
||||
|
Latching current |
T2+G+ |
IL |
VD = 12 V; IGT = 0.1 A |
— |
— |
90 |
mA |
|
T2+G- |
— |
— |
90 |
||||
|
T2-G- |
— |
— |
90 |
||||
|
Gate trigger voltage |
VGT |
VD = 12 V; IT = 0.1 A |
— |
— |
1.3 |
V |
|
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode,
Silicon Transistor ,
Bridge Rectifier
