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ABSOLUTE MAXIMUM RATINGS( T C =25 ° C unless otherwise specified)
|
Symbol |
Parameter/Test Conditions |
Values |
Unit |
|
|
VR |
Maximum D.C. Reverse Voltage |
600 |
V |
|
|
VRRM |
Maximum Repetitive Reverse Voltage |
|||
|
Average Forward Current |
300 |
A |
||
|
TC=75℃, Per Module |
2X300 |
|||
|
RMS Forward Current |
TC=75°C, Per Diode |
430 |
||
|
IFSM |
Non Repetitive Surge Forward Current |
TJ=45℃,t=10/8.3ms,Sine,50/60Hz |
2400/2640 |
|
|
TJ= 150℃ ,t=10/8.3ms,Sine,50/60Hz |
2160/2380 |
|||
|
I2t |
For Fusing |
TJ=45℃,t=10/8.3ms,Sine,50/60Hz |
28800/29300 |
A2S |
|
TJ= 150℃ ,t=10/8.3ms,Sine,50/60Hz |
23300/23800 |
|||
|
Power Dissipation,TC=25℃, |
875 |
W |
||
|
TJ |
Junction Temperature |
℃ |
||
|
Storage Temperature Range |
-40 to +125 |
℃ |
||
|
Visol |
Isolation Breakdown Voltage |
AC, 50Hz(R.M.S), t=1minute/ 1s |
3000/3600 |
V |
|
Md |
Module to Sink |
Recommended（M6） |
4.7 |
Nm |
|
Module Electrodes |
Recommended（M6） |
4.7 |
Nm |
|
|
RthJC |
Junction to Case Thermal Resistance(Per Diode ) |
0.143 |
℃ /W |
|
|
Weight |
|
170 |
g |
|
ELECTRICAL CHARACTERISTICS (T C =25 ° C unless otherwise specified)
| Symbol | Parameter/Test Conditions | Min. | Typ. | Max. | Unit | ||
| IR | Maximum Reverse Leakage Current | VR = 600V, TJ = 25℃ | 12 | mA | |||
| VR = 480V, TJ = 25/ 125℃ | 3/80 | ||||||
| VF | Forward Voltage | IF=150A,TJ=25/ 125℃ | 1.27/ 1.05 | V | |||
| IF=260A,TJ=25/ 125℃ | 1.36/ 1.19 | ||||||
| VTO | For power-loss calculations only | 0.85 | V | ||||
| trr | Reverse Recovery Time(IF = 300A, d IF/dt = -400A/ μs, VR = 300V,TJ = 100℃) | 250 | 300 | ns | |||
| rT | 1.34 | m Ω | |||||
| IRRM | Maximum Reverse Recovery Current | IF=300A, VR =300V, d IF/dt =- 400A/ μs | TJ = 25℃ | 44 | |||
| TJ = 100℃ | 66 | A | |||||
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor ,
Semiconductor Module,
Power Diode,
Silicon Transistor,
Bridge Rectifier
