
DESCRIPTION |
VALUE |
TEST CONDITIONS |
||
Capacit ance
|
Rated Capacitance |
4.7uF |
Measuring frequency: 1kHz±10% Measuring voltage: 1Vrms.max. |
|
Capacitance olerance |
K=±10% |
|||
Voltage |
Rated voltage |
1000Vdc |
1.6*UR Unit:VDC (5 S at 20℃) |
|
Voltage proof |
|
|||
Dissipation factor (tangent of loss)
|
DF≤0.2% 1KHz 1V DF≤0.2% 10KHz 1V |
Measuring frequency:1kHz±10% Measuring voltage: 1Vrms.max. |
||
Insulation resistance |
C≤0.33uF C>0.33uF |
IR≥30000MΩ IR*C≥5000S |
measured at rated voltage or less than 100VDC 1 minute at 20℃ and RH≤65% |
|
(ESR) |
<159mΩ <159mΩ <159mΩ |
@ 1KHZ 25℃ @40KHZ 25℃ @ 100KHZ 25℃ |
||
(Irms) |
8A |
@ 10KHZ 70℃ |
||
(Ipeak) |
600A |
|
||
(dv/dt) |
>45v/us |
@70℃ |
||
(Ut-t) |
1200VDC |
Unit:VDC ( 10 S at 20℃) |
||
(Ut-c) |
3000VDC |
Unit:VAC (60S at 20℃) |
||
|
100000H |
@Un T=70℃ |
||
|
≤100fit |
|
||
|
<2000M |
|
||
Climatic catalogue |
40/85/21 |
|
||
Reference standard |
IEC61071 GB/T17702 |
|
||
|
|
|
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode ,
Silicon Transistor,
Bridge Rectifier