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IGBT Module 600B120E53--FF600R12ME4--2MBI600VN-120

3 year ago
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Product details

YZPST-600B120E53

IGBT Power Module

Applications
Inverter for motor drive
AC and DC servo drive amplifier
UPS (Uninterruptible Power Supplies)
Features
Low Vce(sat) with SPT+ technology
Vce(sat) with positive temperature coefficient
Including fast & soft recovery anti-parallel FWD
High short circuit capability(10us)
Low  inductance module structure

Absolute Maximum Ratings

Parameter

Symbol

Conditions

Value

Unit

Collector-Emitter Voltage

VCES

VGE=0V, IC =1mA, Tvj=25

1200

V

Continuous Collector Current

IC

Tc=100

600

A

Peak Collector Current

ICRM

ICRM=2IC

1200

A

Gate-Emitter Voltage

VGES

Tvj=25

±20

V

Total Power Dissipation

(IGBT-inverter)

Ptot

Tc=25

Tvjmax=175

3750

W


IGBT Characteristics

Parameter

 

Symbol

 

Conditions

 

Value

 

Unit

Min.

Typ.

Max.

 

Gate-emitter Threshold Voltage

VGE(th)

VGE=VCE, IC =3mA,Tvj=25

5.0

5.8

6.5

V

 

Collector-Emitter Cut-off Current

 

ICES

VCE=1200V,VGE=0V, Tvj=25

 

 

1.0

mA

VCE=1200V,VGE=0V, Tvj=125

 

 

5.0

mA

Collector-Emitter Saturation Voltage

 

VCE(sat)

Ic=600A,VGE=15V, Tvj=25

 

1.70

 

V

Ic=600A,VGE=15V, Tvj=125

 

2.00

 

V

Input Capacitance

Cies

 

VCE=25V,VGE =0V,

f=1MHz, Tvj=25

 

43.1

 

nF

Output Capacitance

Coes

 

2.25

 

nF

Reverse Transfer Capacitance

Cres

 

1.95

 

nF

Internal Gate Resistance

Rgint

 

 

1.25

 

Ω

Turn-on Delay Time

td(on)

 

 

 

IC =600 A VCE = 600 V VGE = ±15V RG = 1.2Ω

Tvj=25

 

250

 

ns

Rise Time

tr

 

88

 

ns

Turn-off Delay Time

td(off)

 

560

 

ns

Fall Time

tf

 

131

 

ns

Energy Dissipation During Turn-on

Time

Eon

 

33.1

 

mJ

Energy Dissipation During Turn-off

Time

Eoff

 

57.8

 

mJ

Turn-on Delay Time

td(on)

 

 

 

IC =600 A VCE = 600 V VGE = ±15V RG = 1.2Ω

Tvj=125

 

300

 

ns

Rise Time

tr

 

102

 

ns

Turn-off Delay Time

td(off)

 

650

 

ns

Fall Time

tf

 

180

 

ns

Energy Dissipation During Turn-on

Time

Eon

 

50.2

 

mJ

Energy Dissipation During Turn-off

Time

Eoff

 

87.8

 

mJ

 

SC Data

 

Isc

Tp≤10us,VGE=15V, Tvj=150,Vcc=600V,

VCEM≤1200V

 

 

2400

 

 

A

Diode Characteristics

Parameter

 

Symbol

 

Conditions

 

Value

 

Unit

Min.

Typ.

Max.

 

Diode DC Forward Current

IF

Tc=100

 

600

 

A

Diode Peak Forward Current

IFRM

IFRM=2IF

 

1200

 

A

 

 

Forward Voltage

 

 

VF

IF=600A,Tvj=25

 

1.65

 

V

IF=600A,Tvj=125

 

1.75

 

V

Recovered Charge

Qrr

 

 

IF =600 A VR=600V

-diF/dt =6000A/us Tvj=25

 

60.3

 

uC

Peak Reverse Recovery Current

Irr

 

415

 

A

Reverse Recovery Time

trr

 

260

 

ns

Reverse Recovery Energy

Erec

 

28.1

 

mJ

Recovered Charge

Qrr

 

 

IF =600 A VR=600V

-diF/dt =6000A/us Tvj=125

 

114

 

uC

Peak Reverse Recovery Current

Irr

 

543

 

A

Reverse Recovery Time

trr

 

380

 

ns

Reverse Recovery Energy

Erec

 

51.8

 

mJ

Circuit Diagram

2MBI600VN-120-50 IGBT Module

Package Dimensions

2MBI600VN-120-50 IGBT Module







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Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module, Power Diode , Silicon Transistor, Bridge Rectifier

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