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PC :1W (Ta=25 ℃)
ORDERING
INFORMATION
|
Part |
Package |
Packing |
Pack |
|
SS8550 |
TO-92 |
Bulk |
1000pcs/Bag |
|
SS8550-TA |
T0-92 |
Tape |
2000pcs/Box |
MAX1MUM
RAT1NGs
(Ta=25℃ unless
otherwise noted)
|
symbol |
Parameter |
Value |
Unit |
|
VCBO |
Collector-Base Voltage |
-40 |
V |
|
VCEO |
Collector-Emitter Voltage |
-25 |
V |
|
VEBO |
Emitter-Base Voltage |
-5 |
V |
|
IC |
Collector Current -Continuous |
- 1.5 |
A |
|
PD |
Collector Power Dissipation |
1000 |
mW |
|
R θ JA |
Thermal Resistance f rom Junction to Ambient |
125 |
℃ / W |
|
TJ,Tstg |
Operation Junction and Storage Temperature Range |
-55 -＋150 |
℃ |
Ta=25 ℃ unless otherwise specified
Parameter
symbol
Test
Min
Typ
Max
Unit
conditions
Collector.base
V(BR)CBO
IC=- 100uA, IE=0
-40
V
breakdown
voltage
Collector.emitter
V(BR)CEO
IC=-0. 1mA, IB=0
-25
V
breakdown voltage
Emitter.base
V(BR)EBO
IE=- 100uA, IC=0
-5
V
breakdown
voltage
Collector
ICBO
VCB=-40V, IE=0
-0. 1
uA
cut.off
current
Emitter
ICEO
VCE=-20V, IE=0
-0. 1
uA
cut.off
current
Emitter
IEBO
VEB=-5V, IC=0
-0. 1
uA
cut.off
current
DC
hFE(1)
VCE=- 1V, IC=- 100mA
85
400
current
gain
hFE(2)
VCE=- 1V, IC=-800mA
40
Collector.emitter
VCE(sat)
IC=-800mA, IB=-80mA
-0.5
V
saturation
voltage
Base.emitter
VBE(sat)
IC=-800mA, IB=-80mA
-1.2
V
saturation voltage
Base.emitter
VBE(on)
VCE=- 1V, IC=- 10mA
-1
V
voltage
out
Cob
VCB=- 10V, IE=0mA,f=1MHZ
20
pF
capacitance
Transition
fT
VCE=- 10V, IC=-50mA,f=30MHZ
100
MHz
frequency
To.92 Package
outline
Dimensions
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor ,
Semiconductor Module,
Power Diode,
Silicon Transistor,
Bridge Rectifier
