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YZPST-BTA316-800c
YZPST brand BTA316-800C triac TO-220
Package
TO-220F
Main Feature(Tj=25℃)
| Symbol | Value | Unit |
| IT(RMS) | 16 | A |
| VDRM / VRRM | ≥800 | V |
| ITSM | 160 | A |
Absolute ratings (Limiting Values)
| Symbol | Parameter | Value | Unit | |
| IT (RMS) | Rms on-state current(full sine wave) | 16 | A | |
| Non- repetitive Peak on-state | ||||
| ITSM | Current (Tj=25℃,tp=20ms) | 160 | A | |
| I2t | I2t for fusing(tp=10ms) | 140 | A2S | |
| IGM | Peak gate current | 4 | A | |
| VGM | Peak gate voltage | 16 | V | |
| PGM | Peak gate power | 40 | W | |
| PG(AV) | Average gate power | 1 | W | |
| dIT/dt | Repetitive rate of rise of on-state current after triggering | Ⅰ- Ⅱ-Ⅲ | 50 | |
| (IT=6A,IG =0.2A,dlG/dt=0.2A/us) | Ⅳ | 50 | A/μs | |
| Tstg | Storage temperature | 110 | ℃ | |
| Tj | Operating junction temperature | 85 | ||
Thermai Resistances
| Symbol | Parameter | Condition | Type | Unit | |
| Rth j-c | Thermal Resistance,Junction to case | One cycle | 220F | 1.2 | ℃/W |
| Rth j-a | Thermal Resisatance,Junction to ambient | —— | —— | 60 | ℃/W |
Electrical characteristics (Tj=25℃ unless otherwise stated)
| Symbol | Test Conditions | Type | Max | Unit | |
| BTA316-800 | C | B | |||
| VD=12V IT=0.1A | |||||
| T2+ G+ | 11 | 16 | 25 | mA | |
| IGT | T2+ G- | 12 | 20 | 30 | mA |
| T2- G- | 18 | 25 | 50 | mA | |
| T2- G+ | mA | ||||
| IH | VD=12V IGT=0.1A | 25 | 50 | mA | |
| VTM | IT=20A | — 1.3— | 1.7 | V | |
| I DRM | V DRM=520V | 10 | μA | ||
| IRRM | VRRM=520V | 15 | μA | ||
| VD=12V IT=0.1A | |||||
| VGT | Tj=125℃ | —— | 1.65 | V | |
| VD=VDRM（MAX） | |||||
| ID | Tj=125℃ | —— | 0.5 | mA | |
Measure of package TO-263 ：
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode ,
Silicon Transistor,
Bridge Rectifier
