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| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Repetitive peak reverse voltage | VRRM | 1800 | V | Tc=125oC | ||
| Non repetitive peak reverse voltage | VRSM | 1900 | V | Tc=125oC | ||
| Max. average forward current | IF(AV) | 20 | A | Sinewave,180o | ||
| conduction,Tc=120oC | ||||||
| Max. RMS forward current | IF(RMS) | 38 | A | Nominal value | ||
| Max. peak, one-cycle forward, non-repetitive surge current | IFSM | 240 | A | 10.0 msec (50Hz), half sinewave, Tj = Tj MAX | ||
| Maximum I2tfor fusing | I2t | 400 | A2s | |||
| Max. forward voltage drop | VF | 1.95 | V | IF = 60A; Tj = 25oC | ||
| Threshold voltage | VF0 | 1.08 | V | Tj = Tj MAX | ||
| Slope resistance | rt | 6.33 | mΩ | Tj = Tj MAX |
Thermal and Mechanical Specifications
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Repetitive peak reverse leakage and off state | IRRM | 10 | mA | |||
| Operating temperature | Tj | -40 | 125 | oC | ||
| Storage temperature | Tstg | -40 | 150 | oC | ||
| Maximum Reverse Recovery Time | Trr | 1500 | ns | IF=70A,tp=170us | ||
| Reverse recovery charge | Qrr | - | μc | |||
| Thermal resistance - junction to case | RΘ (j-c) | 0.6 | - | K/W | ||
| Thermal resistamce - case to heatsink | RΘ (c-s) | 0.25 | - | oC/W | ||
| Mounting force | P | 2.2 | Nm | ± 20% | ||
| Weight | W | - | - | - | g | About |
| Case style | - | See Outline Table |
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Main Product:
Semiconductor Triac ,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode,
Silicon Transistor,
Bridge Rectifier
