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BTA60 Series 60A TRIACs
DESCRIPTION:
The BTA60 triac series is suitable to fit all models of control Found in applications such as motor control ,industrial and domestic lighting ,heating and static switching , motor speed controllers,…Thanks to their clip assembly technique, theyprovide a superior performance in surge currenthandling capabilities
By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at2500VRMS) complying with UL standards
Symbol |
Value |
Unit |
IT(RMS) |
60 |
A |
VDRM VRRM |
1200/1600 |
V |
VTM |
1.55 |
V |
ABSOLUTE MAXIMUM RATINGS
Parameter |
Symbol |
Value |
Unit |
Storage junction temperature range |
Tstg |
-40 ~150 |
℃ |
Operating junction temperature range |
Tj |
-40~125 |
℃ |
Repetitive peak off-state voltage (T =25℃) |
VDRM |
1200/1600 |
V |
Repetitive peak reverse voltage (T =25℃) |
VRRM |
1200/1600 |
V |
RMS on-state current |
IT(RMS) |
60 |
A |
Non repetitive surge peak on-state current (full cycle, F=50Hz) |
ITSM |
500 |
A |
I2t value for fusing (tp=10ms) |
I2t |
1250 |
A2S |
Critical rate of rise of on-state current (I =2×IGT) |
dI/dt |
50 |
A/μS |
Peak gate current |
IGM |
8 |
A |
Average gate power dissipation |
PG(AV) |
1 |
W |
ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified)
3 Quadrants
Symbol |
Test Condition |
Quadrant |
|
Value |
Unit |
IGT |
V =12V R =33Ω |
Ⅰ Ⅱ Ⅲ |
MAX. |
50 |
mA |
VGT |
Ⅰ-Ⅱ-Ⅲ |
MAX. |
1.3 |
V |
|
VGD |
VD=VDRM Tj=125℃ R=3.3KΩ |
Ⅰ-Ⅱ-Ⅲ |
MIN. |
0.2 |
V |
IL |
IG=1.2IGT |
Ⅰ-Ⅲ |
MAX. |
80 |
mA |
II |
180 |
||||
IH |
IT=100mA |
MAX. |
80 |
mA |
|
dV/dt |
VD=2/3VDRM Gate Open Tj=125℃ |
MIN. |
1000 |
V/μs |
STATIC CHARACTERISTICS
Symbol |
Parameter |
Value(MAX.) |
Unit |
|
VTM |
ITM =80A tp=380μs |
Tj =25℃ |
1.65 |
V |
IDRM |
VD=VDRM VR=VRRM |
Tj =25℃ |
10 |
μA |
IRRM |
Tj =125℃ |
5 |
mA |
Thermal Resistances
Symbol |
Parameter |
Value |
Unit |
Rth(j-a) |
junction to ambient |
50 |
℃/W |
Rth(j-c) |
Junction to case(AC) |
0.8 |
Ordering Information Scheme
TO-3P Package Mechanical Data
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Main Product:
Semiconductor Triac,
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Semiconductor Module,
Power Diode,
Silicon Transistor ,
Bridge Rectifier