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160A 1600V
YZPST-MCO150-16I01
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
| Symbol | Parameter | Test Conditions | Values | Unit |
| VRRM | Maximum Repetitive Reverse Voltage | Tvj=125℃ | 1600 | V |
| VDRM | Maximum repetitive peak off-state voltage | |||
| VRSM | Non-Repetitive Reverse Voltage | Tvj=125℃ | 1700 | V |
| VDSM | Non-repetitive peak off-state voltage | |||
| IRRM | Maximum Repetitive Reverse Current | Tvj=125℃ | 8 |
 A
|
| IDRM | Maximum repetitive peak off-state Current | |||
| IT(AV) | Mean On-state Current | TC=85℃ | 160 | |
| IT(RMS) | RMS Current | TC=85℃, sin180° | 251 | A |
| ITSM | Non Repetitive Surge Peak On-state Current | 10ms, Tj=25℃ | 2300 | |
| I2t | For Fusing | 10ms, Tj=25℃ | 125 |
 A2S
|
| VTM | Peak on-state voltage | ITM=160A | 1.4 | V |
| ITM=480A | 1.8 | |||
| dv/dt | critical rate of rise of off-state voltage | VD =2/3VDRM Gate Open Tj=125℃ | 1000 | V/us |
| IGT | gate trigger current max. | 100 |
 A
|
|
| VGT | gate trigger voltage max. | 1.3 | V | |
| IH | gate trigger current | 220 |
 A
|
|
| IL | latching current | 350 |
 A
|
|
| Viso | AC 50Hz RMS 1min | 2500 | V | |
| TJ | Junction Temperature | -40 to +125 | ℃ | |
| TSTG | Storage Temperature Range | -40 to +125 | ||
| RthJC | Junction to Case Thermal Resistance(Per thyristor chip ) | 0. 13 | ℃ /W | |
| mounting torque | Module to Sink | 1. 1-1.5 | Nm | |
| Terminal | 1. 1-1.5 | |||
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode ,
Silicon Transistor,
Bridge Rectifier
