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NPN SILICON POWER TRANSISTORS 13005D
●DESRCRIPTION:
The 13005D is an NPN transistor used in electronic ballasts and electronic energy saving -lamps. It has the characteristics of low switching loss, high reliability, good high temperature characteristics, suitable switching speed, high breakdown voltage and low reverse leakage.
●ABSOLUTE MAX I MUM RATINGS
|
Symbol |
Parameter |
Value |
Unit |
|
|
VCBO |
Collector-Base Voltage |
700 |
V |
|
|
VCEO |
Collector-Emitter Voltage |
400 |
V |
|
|
VEBO |
Emitter-Base Voltage |
9 |
V |
|
|
IC |
Continuous Collector Current |
3 |
A |
|
|
Icm |
Collector Pulse Current（Tp＜5ms） |
6 |
A |
|
|
PTOT |
Total dissipation at Tcase=25 ℃ |
TO-126SD |
50 |
W |
|
TO-220 |
75 |
|||
|
Tj |
Junction Temperature |
150 |
℃ |
|
|
Tstg |
Storage Temperature Range |
-55—150 |
℃ |
|
|
Symbol |
Parameter |
Test Condition |
Value |
Unit |
||
|
Min |
Type |
Max |
||||
|
ICBO |
Collector Cutoff Current |
VCB= 700 V，IE=0 |
|
|
0.1 |
mA |
|
ICEO |
Base Cutoff Current |
VCE= 400 V，Ic=0 |
|
|
0.1 |
mA |
|
IEBO |
Emitter Cutoff Current |
VEB= 9 V，IC=0 |
|
|
0.1 |
mA |
|
VCBO |
Collector-Base Breakdown Voltage |
IC= 0.1mA |
700 |
|
|
V |
|
VCEO |
Collector-Emitter Breakdown Voltage |
IC= 0.1mA |
400 |
|
|
V |
|
VEBO |
Emitter-Base Breakdown Voltage |
IB= 0.1mA |
9 |
|
|
V |
|
hFE |
DC Current Gain |
IC= 0.5A,VCE= 5V |
15 |
|
35 |
|
|
a VCE sat |
Collector-Base Breakdown Voltage |
IC= 2A,IB= 0.5A |
|
|
1 |
V |
|
a VBE sat |
Base-Emitter Saturation Voltage |
IC= 2A,IB= 0.5A |
|
|
1.5 |
V |
|
ts |
Storage Time |
UI9600，Ic=0.5A |
2 |
|
7 |
us |
|
fT |
Transition Frequency |
VCE=10V，IC=0.2A F=1MHz |
5 |
|
|
MHz |
|
a：Pulse Test，tp ≤300us，δ≤2% |
||||||
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode,
Silicon Transistor,
Bridge Rectifier
