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YZPST-75HF120TK-G1
75A 1200V IGBT Module
FEATURES
High short circuit capability, self limiting short circuit current
High short circuit capability ,self limiting short circuit current
IGBT CHIP(Trench+ Field Stop technology)
VcE(sat) with postive temperature cofficient
Fast switching and short tail current, Low switching losses
Free wheeling diodes with fast and soft reverse recovery
Temperature sense included
APPLICATIONS
High frequency switching application
Welding converters
Motion/servo control
UPS systems
ABSOLUTE MAXIMUM RATINGS TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Values
Unit
IGBT
VCES
Collector - Emitter Voltage
TVj=25°C
1250
V
VGES
Gate - Emitter Voltage
±30
V
IC
DC Collector Current
TC=25°C
115
A
TC=80°C
75
A
ICM
Repetitive Peak Collector Current
tp=1ms
150
A
Ptot
Power Dissipation Per IGBT
500
W
Diode
VRRM
Repetitive Reverse Voltage
TVj=25°C
1250
V
IF(AV)
Average Forward Current
TC=25°C
115
A
TC=80°C
75
A
IFRM
Repetitive Peak Forward Current
tp=1ms
150
A
I2t
TVj =125°C,
t=10ms, VR=0V
2810
A2s
MODULE CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
TVj max
Max. Junction Temperature
150
°C
TVj op
Operating Temperature
-40
150
°C
Tstg
Storage Temperature
-40
125
°C
Visol
Insulation Test Voltage
AC, t=1min
3000
V
Torque
To-Sink
Recommended M6
3
5
N·m
Torque
To-Terminal
Recommended M5
2.5
5
N·m
Weight
176
g
PACKAGE OUTLINE
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