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YZPST-300HF120TK-G2
300A 1200V IGBT Module
FEATURES
High short circuit capability, self limiting short circuit current
IGBT CHIP(Trench+ Field Stop technology)
VCE(sat) with positive temperature coefficient
Fast switching and short tail current, Low switching losses
Free wheeling diodes with fast and soft reverse recovery
Temperature sense included
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
ABSOLUTE MAXIMUM RATINGS TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Values
Unit
IGBT
VCES
Collector - Emitter Voltage
TVj=25°C
1250
V
VGES
Gate - Emitter Voltage
±30
V
IC
DC Collector Current
TC=25°C
450
A
TC=80°C
300
A
ICM
Repetitive Peak Collector Current
tp=1ms
600
A
Ptot
Power Dissipation Per IGBT
2083
W
Diode
VRRM
Repetitive Reverse Voltage
TVj=25°C
1250
V
IF(AV)
Average Forward Current
TC=25°C
450
A
TC=80°C
300
A
IFRM
Repetitive Peak Forward Current
tp=1ms
600
A
ELECTRICAL AND THERMAL CHARACTERISTICS TC=25°C unless otherwise specified
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
||
|
IGBT |
||||||||
|
VGE(th) |
Gate - Emitter Threshold Voltage |
VCE=VGE, IC=2.0mA |
5.0 |
|
6.8 |
V |
||
|
VCE(sat) |
Collector - Emitter |
IC=300A, VGE=15V, TVj=25°C |
|
2.2 |
2.6 |
V |
||
|
Saturation Voltage |
IC=300A, VGE=15V, TVj=125°C |
|
2.65 |
|
V |
|||
|
ICES |
Collector Leakage Current |
VCE=1250V, VGE=0V, TVj=25°C |
|
|
1 |
mA |
||
|
VCE=1250V, VGE=0V, TVj=125°C |
|
|
5 |
mA |
||||
|
Rgint |
Integrated Gate Resistor |
Per switch |
|
5 |
|
Ω |
||
|
IGES |
Gate Leakage Current |
VCE=0V,VGE±15V, TVj=125°C |
-500 |
|
500 |
nA |
||
|
Cies |
Input Capacitance |
VCE=25V, VGE=0V, f =1MHz |
|
21.3 |
|
nF |
||
|
Cres |
Reverse Transfer Capacitance |
|
1.42 |
|
nF |
|||
|
td(on) |
Turn - on Delay Time |
VCC=600V,IC=300A, |
TVj =25°C |
|
393 |
|
ns |
|
|
RG =3.3Ω, |
TVj =125°C |
|
395 |
|
ns |
|||
|
tr |
Rise Time |
VGE=±15V, |
TVj =25°C |
|
130 |
|
ns |
|
|
Inductive Load |
TVj =125°C |
|
135 |
|
ns |
|||
|
td(off) |
Turn - off Delay Time |
VCC=600V,IC=300A, |
TVj =25°C |
|
570 |
|
ns |
|
|
RG =3.3Ω, |
TVj =125°C |
|
600 |
|
ns |
|||
|
tf |
Fall Time |
VGE=±15V, |
TVj =25°C |
|
145 |
|
ns |
|
|
Inductive Load |
TVj =125°C |
|
155 |
|
ns |
|||
|
Eon |
Turn - on Energy |
VCC=600V,IC=300A, |
TVj =25°C |
|
7.7 |
|
mJ |
|
|
RG =3.3Ω, |
TVj =125°C |
|
14.5 |
|
mJ |
|||
|
Eoff |
Turn - off Energy |
VGE=±15V, |
TVj =25°C |
|
26.3 |
|
mJ |
|
|
Inductive Load |
TVj =125°C |
|
33.5 |
|
mJ |
|||
|
ISC |
Short Circuit Current |
tpsc≤10µS , VGE=15V TVj=125°C,VCC=900V |
|
2100 |
|
A |
||
|
RthJC |
Junction-to-Case Thermal Resistance (Per IGBT) |
|
|
0.07 |
K /W |
|||
|
Diode |
||||||||
|
VF |
Forward Voltage |
IF=300A , VGE=0V, TVj =25°C |
|
1.82 |
2.25 |
V |
||
|
IF=300A , VGE=0V, TVj =125°C |
|
2.0 |
|
V |
||||
|
Qrr |
Reversed Charge |
IF=300A , VR=600V |
|
|
40 |
|
uC |
|
|
IRRM |
Max. Reverse Recovery Current |
diF/dt=-2360A/μs |
|
|
250 |
|
A |
|
|
Erec |
Reverse Recovery Energy |
TVj =125°C |
|
|
18.5 |
|
mJ |
|
|
RthJCD |
Junction-to-Case Thermal Resistance |
(Per Diode) |
|
|
|
0.12 |
K /W |
|
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