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YZPST-K3002GRP Diode

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Product details
P/N: YZPST-K3002GRP
Sidac High Voltage
Bidirectional Triggers
1A Mpere RMS
Features
High pressure Sodium Vapor Lighting
High Voltage Regulators
Pulse Generators
Uesd to Trigg Gates of SCR, s and Triacs
These are pb free Devices*
LED lamp protection
 
Mechanical Data
 
Terminals: Plated axial leads
ounting Position: Any
YZPST-K3002GRP
Maximum Ratings & Thermal Characteristics
Ratings at 25 ambient temperature unless otherwise specified.
 
Rating Symbols K300 Unit
Maximum repetitive peak reverse voltage Sine Wsve,50to60Hz,TJ=-40to125) VDRM  VRRM    
   
±240 V
On-state  RMS current(TL=80,Lead Length=3/8",All Conduction Angles IT(RMS)    
   
±1.0 A
Peak Non Repetitive Surge Current   ±20  
     
(60Hz One Cycle Sine-wave,TJ=125) ITSM A
Operating Junction Temperature Range TJ -40 to +125
  Tstg -40 to +125
 
Storge Temperature Range
Thermal Resistance,Junction-to-led (LEAD LENGTH=3/8") RθJA 15 /W
Lead Solder Temperature TL 275
 
(Lead length1/16" from Case,10s Max)
ELECTRICAL CHARACTERISTICS (TC = 25 unless otherwise noted;Eletricals apply in both directions)

Characteristic

Symbols

YZPST-K3002GRP

Unit

Min

 

270

 

Breakover Voltage,lBO=200μA

VBO

330

V

Repetitive peak Off-State Current (50to60Hz Sine Wave)

 

 

 

IDRM

5

μA

 

IBO

 

 

Breakover Current

200

μA

Peak On_State Voltage

 

Typ    1.5 Max    4

 

(ITM=1APeak,Pulse Width≤300µs,Duty Cycle≤2%)

VTM

V

Dynamic Holding Current

IH

Typ    50

mA

(Sine Wave,60Hz,RL=100Ω)

Max   100

Switching Resistance (Sine Wave,50to60Hz)

RS

0.1

 

Critical rate  of  rise of on_state Current,

 

 

 

Critical Damped Eaveform Circuit (IPK=130Ω,Pulse Width=10μsec)

di/dt

120

 

 

 

 

A/μS

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7 year
Address: Yangzhou, China


Main Product: Semiconductor Triac, Semiconductor Thyristor , Semiconductor Module, Power Diode, Silicon Transistor, Bridge Rectifier

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