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FR1000AX50 Fast Switching Reverse-conducting Thyristor
RCT FOR INVERTER AND CHOPPER APPLICATIONS
2500 VDRM; 1550 A rms
YZPST-FR1000AX50
Features:
. All Diffused Structure
. Interdigitated Amplifying Gate Configuration
. Blocking capabilty up to 2500 volts
. Guaranteed Maximum Turn-Off Time
. High dV/dt Capability
. Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
|
Device Type |
VDRM (1) |
VDSM (1) |
|
FR1000AX50 |
2500 |
2500 |
VDRM = Repetitive peak off state voltage
|
Repetitive peak off state leakage |
IDRM
|
20 mA 80mA (3) |
|
Critical rate of voltage rise |
dV/dt (4) |
700 V/msec |
Notes:
All ratings are specified for Tj=25 oC unless
otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential
waveshape to 80% rated VDRM. Gate open.
Tj = 125 oC.
(5) Non-repetitive value.
Conducting - on state
|
Parameter |
Symbol |
|
Max. |
Typ. |
Units |
Conditions |
|
RMS value of on-state current |
ITRMS |
|
1550 |
|
A |
Nominal value |
|
Average on-state current |
IT(AV)
|
|
1000 |
|
A |
Continuous single-phase,half sine wave,180°conduction |
|
Peak one cycle surge (non repetitive) current |
ITSM |
|
14000 |
|
A |
8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
|
I square t |
I2t |
|
8.2.x105 |
|
A2s |
8.3 msec and 10.0 msec |
|
RNS reverse currrnt |
IR(RMS) |
|
630 |
|
A |
|
|
Average reverse current |
IR(AV) |
|
400 |
|
A |
Continuous single-phase,half sine wave,180°conduction |
|
Peak on-state voltage |
VTM |
|
2.2
|
|
V |
ITM=1000A Tj = 125 oC |
|
Peak reverse voltage |
VRM |
|
4.0 |
|
V |
IRM=1200A, Tj = 125 oC |
|
Critical rate of rise of on-state current |
di/dt |
|
300 |
|
A/ms |
VD=1/2VDRM,ITM=800A f=60HZ IGM=1.5A,diG/dt=1.0A/us,Tj=125℃ |
|
Critical rate of decrease of reverse conmmutating current |
(di/dt)C |
|
200 |
|
A/ms |
ITM=4000A,tw=60us,IRM=4000A,dv/dt=700V/us,VDM=1/2VDRN,Tj=125℃,Saturable reactor7500v.us |
Gating
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Peak gate power dissipation |
PGM |
|
30 |
|
W |
tp = 40 us |
|
Average gate power dissipation |
PG(AV) |
|
8 |
|
W |
|
|
Peak gate current |
IGM |
|
10 |
|
A |
|
|
Gate current required to trigger all units |
IGT |
|
350
|
|
mA
|
VD = 6 V;RL = 2 ohms;Tj = +25 oC
|
|
Gate voltage required to trigger all units
|
VGT |
|
4
|
|
V
|
VD = 6 V;RL = 2 ohms;Tj = 25oC
|
|
Peak non- trigger voltage |
VGD |
|
0.2 |
|
V |
Tj = 125 oC;VD=1/2VDRM |
Dynamic
|
Parameter |
Symbol |
. |
Max. |
Typ. |
Units |
Conditions |
|
Turn-off time |
tq |
|
50
|
|
ms |
ITM =4000 A; di1/dt = -200A/ms; di2/dt=50A/us,IRM=500A; dV/dt =700 V/ms VDR=1250V Tj = 125 oC;tw=60us |
|
|
|
|
|
|
|
|
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
|
Storage temperature |
Tstg |
-40 |
+150 |
|
oC |
|
|
Thyristor part thermal resistance - junction to fin |
RQⅠ (j-f) |
|
0.022
|
|
oC/W |
Double sided cooled
|
|
Diode part thermal resistamce – junction to fin |
RQⅢ (j-f) |
|
0.070
|
|
oC/W |
Double sided cooled
|
|
Mounting force |
P |
|
45 |
|
kN |
|
|
Weight |
W |
|
670 |
|
g |
|
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